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Conference Paper: Low-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2

TitleLow-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2
Authors
Keywords1/f noise
Dc sputtering
Dielectric constants
High quality
I-v measurements
Issue Date2009
PublisherIEEE.
Citation
The IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 201-204 How to Cite?
AbstractOTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200 °C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric. Afterwards, P3HT was deposited by spin-coating method. The OTFTs were characterized by I-V measurement and 1/f noise measurement. The OTFT with gate dielectric annealed in NH3 displays higher carrier mobility, smaller threshold voltage, smaller sub-threshold swing, and lower 1/f noise level than the OTFT annealed in N2. Moreover, the HfTiO dielectric film annealed in NH3 shows higher dielectric constant. In summary, HfTiO film annealed in NH 3 at low temperature is a promising candidate to act as the gate dielectric of high-quality low-voltage OTFTs. ©2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/126152
ISBN
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDeng, LFen_HK
dc.contributor.authorChoi, HWen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLiu, YRen_HK
dc.contributor.authorXu, JPen_HK
dc.date.accessioned2010-10-31T12:12:36Z-
dc.date.available2010-10-31T12:12:36Z-
dc.date.issued2009en_HK
dc.identifier.citationThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 201-204en_HK
dc.identifier.isbn978-1-4244-4297-3-
dc.identifier.urihttp://hdl.handle.net/10722/126152-
dc.description.abstractOTFTs with P3HT as organic semiconductor and HfTiO as gate dielectric have been studied in this work. The HfTiO dielectric film was prepared by RF sputtering of Hf and DC sputtering of Ti at room temperature. Subsequently, the dielectric film was annealed in an NH3 or N2 ambient at 200 °C. Then a layer of OTS was deposited by spin-coating method to improve the surface characteristics of the gate dielectric. Afterwards, P3HT was deposited by spin-coating method. The OTFTs were characterized by I-V measurement and 1/f noise measurement. The OTFT with gate dielectric annealed in NH3 displays higher carrier mobility, smaller threshold voltage, smaller sub-threshold swing, and lower 1/f noise level than the OTFT annealed in N2. Moreover, the HfTiO dielectric film annealed in NH3 shows higher dielectric constant. In summary, HfTiO film annealed in NH 3 at low temperature is a promising candidate to act as the gate dielectric of high-quality low-voltage OTFTs. ©2009 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.-
dc.relation.ispartof2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits. Copyright © IEEE.-
dc.rights©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.subject1/f noise-
dc.subjectDc sputtering-
dc.subjectDielectric constants-
dc.subjectHigh quality-
dc.subjectI-v measurements-
dc.titleLow-voltage polymer thin-film transistors with high-k HfTiO gate dielectric annealed in NH3 or N2en_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=978-1-4244-4297-3&volume=&spage=201&epage=204&date=2009&atitle=Low-voltage+polymer+thin-film+transistors+with+high-k+HfTiO+gate+dielectric+annealed+in+NH3+or+N2-
dc.identifier.emailChoi, HW: hwchoi@hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/EDSSC.2009.5394285en_HK
dc.identifier.scopuseid_2-s2.0-77949575312en_HK
dc.identifier.hkuros179095en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77949575312&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage201en_HK
dc.identifier.epage204en_HK
dc.identifier.isiWOS:000289818000051-
dc.description.otherThe IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC 2009), Xi'an, China, 25-27 December 2009. In Proceedings of EDSSC, 2009, p. 201-204-
dc.identifier.scopusauthoridDeng, LF=25936092200en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLiu, YR=35201703300en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK

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