|
physics engineering |
15 |
|
physics |
10 |
|
photoluminescence |
8 |
|
gan |
6 |
|
oled |
6 |
|
titanium dioxide |
6 |
|
tris-(8-hydroxyquinoline) aluminium |
6 |
|
b1. nanomaterials |
5 |
|
b1. oxides |
5 |
|
b1. zinc compounds |
5 |
|
carbon material devices |
5 |
|
doping |
5 |
|
gold materials |
5 |
|
heterojunction |
5 |
|
nanostructures |
5 |
|
photovoltaic cells |
5 |
|
polymers |
5 |
|
stm |
5 |
|
titanium |
5 |
|
topological insulator |
5 |
|
zinc oxide |
5 |
|
a1. nanomaterials |
4 |
|
a1. nanostructures |
4 |
|
atomic force microscopy |
4 |
|
b2. semiconducting ii-vi materials |
4 |
|
bi 2se 3 film |
4 |
|
block copolymers |
4 |
|
dft |
4 |
|
electrochemical performance |
4 |
|
gold |
4 |
|
hybrid solar cells |
4 |
|
layered double hydroxide |
4 |
|
lead removal |
4 |
|
low temperature |
4 |
|
magnesium leaching |
4 |
|
magnetoresistance |
4 |
|
materials characterization |
4 |
|
mbe |
4 |
|
membrane |
4 |
|
metal oxides |
4 |
|
molecular beam epitaxy |
4 |
|
nano-composite |
4 |
|
nano-composites |
4 |
|
nanowire |
4 |
|
optics |
4 |
|
organic solar cells |
4 |
|
phase contrast |
4 |
|
porosity |
4 |
|
positron beams |
4 |
|
scanning electron microscopy |
4 |
|
sic |
4 |
|
silver vanadium oxides |
4 |
|
sol–gel method |
4 |
|
spinel ferrite |
4 |
|
tem |
4 |
|
transport property |
4 |
|
ultraviolet radiation |
4 |
|
zno |
4 |
|
2d materials |
3 |
|
a. nanostructures |
3 |
|
a. oxides |
3 |
|
a3. molecular beam epitaxy |
3 |
|
anode |
3 |
|
atomic force microscopy (afm) |
3 |
|
b1. zno |
3 |
|
diblock copolymers |
3 |
|
dopant-free |
3 |
|
epifilms |
3 |
|
epitaxy |
3 |
|
etching |
3 |
|
exciton theory |
3 |
|
film thickness |
3 |
|
gallium nitride |
3 |
|
graphene oxide |
3 |
|
hole transport materials |
3 |
|
hollow spheres |
3 |
|
inorganic nanostructures |
3 |
|
interferometric autocorrelation |
3 |
|
light absorption |
3 |
|
lithium ion batteries |
3 |
|
lithium ion battery |
3 |
|
lithium ion battteries |
3 |
|
lithium-ion battery |
3 |
|
luminescence |
3 |
|
mapbi 3 solar cells |
3 |
|
mass spectrometry |
3 |
|
metal oxide nanostructures |
3 |
|
mn2o3 |
3 |
|
mobility |
3 |
|
molecular orientation |
3 |
|
morphology |
3 |
|
morphology evolution |
3 |
|
multiphoton absorption (mpa) |
3 |
|
nanostructure materials |
3 |
|
nanowires |
3 |
|
organic nanostructures |
3 |
|
p(s-b-mma) |
3 |
|
phase separation |
3 |
|
photons |
3 |
|
porous cubes |
3 |
|
porous structures |
3 |
|
quantum electronics |
3 |
|
room temperature |
3 |
|
scanning transmission electron microscopy |
3 |
|
scanning tunneling microscopy |
3 |
|
second-harmonic generation (shg) |
3 |
|
semiconductor doping |
3 |
|
silicon |
3 |
|
superconductors |
3 |
|
surface treatment |
3 |
|
three-photon absorption |
3 |
|
tio2(b), solution treatment, tio2 composite |
3 |
|
topological insulators |
3 |
|
transition metal dichalcogenides |
3 |
|
van der waals epitaxy |
3 |
|
x-rays -- diffraction |
3 |
|
zinc oxide (zno) |
3 |
|
znmn2o4 |
3 |
|
1d metal |
2 |
|
2d crystal |
2 |
|
a1. sem |
2 |
|
a1. substrates |
2 |
|
a1. surface processes |
2 |
|
a1. suspended ga2se3 film |
2 |
|
a1. xrd |
2 |
|
a3. molecular-beam epitaxy |
2 |
|
a3. thermal evaporation |
2 |
|
adlayer |
2 |
|
amorphous |
2 |
|
amorphous regions |
2 |
|
as-grown |
2 |
|
astrochemistry |
2 |
|
b1. bismuth compounds |
2 |
|
b1. nitrides |
2 |
|
b1. potassium tungstate |
2 |
|
b1. topological insulator |
2 |
|
b2. bi2se3 |
2 |
|
b2. ga2se3 |
2 |
|
b2. semiconducting gallium compounds |
2 |
|
b2. topological insulator |
2 |
|
band bending |
2 |
|
blue phosphorene |
2 |
|
catalysis |
2 |
|
co thin films |
2 |
|
computer networks |
2 |
|
condensed matter physics |
2 |
|
cr |
2 |
|
cross-sectional stem |
2 |
|
crystal growth |
2 |
|
crystal structure |
2 |
|
crystalline silicate |
2 |
|
curie temperature |
2 |
|
defect formation |
2 |
|
deposition rates |
2 |
|
electron microscopes |
2 |
|
electron microscopy |
2 |
|
electron optics |
2 |
|
energy bandgaps |
2 |
|
exciton |
2 |
|
ferromagnetism |
2 |
|
first-principles |
2 |
|
friedel oscillation |
2 |
|
ga |
2 |
|
gallium fluxes |
2 |
|
gamnn |
2 |
|
gan/zno |
2 |
|
growth (materials) |
2 |
|
growth characteristic |
2 |
|
growth front |
2 |
|
growth modes |
2 |
|
growth of thin films |
2 |
|
growth parameters |
2 |
|
hetero interfaces |
2 |
|
hetero-interfaces |
2 |
|
heteroepitaxial |
2 |
|
high energy electron diffraction |
2 |
|
ingan |
2 |
|
insulating polymers |
2 |
|
interface |
2 |
|
interface formation |
2 |
|
lattice constants |
2 |
|
led |
2 |
|
low-energy electron diffraction |
2 |
|
mbe,stm/s |
2 |
|
metal-phosphorus network |
2 |
|
metal-phosphorus networks |
2 |
|
methanol |
2 |
|
mirror twin boundaries |
2 |
|
mirror twin grain boundary |
2 |
|
mirror twin-domain boundary |
2 |
|
mirror-twin domain boundaries |
2 |
|
mn |
2 |
|
mn-doped |
2 |
|
morphological properties |
2 |
|
mos -au interaction 2 |
2 |
|
mose 2 |
2 |
|
mote2 monolayer |
2 |
|
nanomaterials |
2 |
|
nanoporous |
2 |
|
ni |
2 |
|
niobium |
2 |
|
niobium doping |
2 |
|
normal band |
2 |
|
nucleation |
2 |
|
one-dimensional system |
2 |
|
phase transition |
2 |
|
phosphorus |
2 |
|
physics engineering chemistry |
2 |
|
piezoelectric field |
2 |
|
polarity |
2 |
|
polymorphism |
2 |
|
positive ions |
2 |
|
quantum confined stark effect |
2 |
|
quantum effects |
2 |
|
quantum size effects |
2 |
|
quantum well |
2 |
|
quantum well states |
2 |
|
relaxation rates |
2 |
|
scanning tunneling spectroscopy |
2 |
|
semiconductors |
2 |
|
siox |
2 |
|
source fluxes |
2 |
|
spectroscopy |
2 |
|
stem |
2 |
|
step-guided epitaxy |
2 |
|
stm/sts |
2 |
|
surface reconstructions |
2 |
|
tailorable |
2 |
|
thermal doping |
2 |
|
tmd monolayer |
2 |
|
tomonaga−luttinger liquid |
2 |
|
total energy calculation |
2 |
|
transition metal dichalcogenide |
2 |
|
transition metal dichalcogenide monolayers |
2 |
|
transition-metal chalcogenides |
2 |
|
two-dimensional |
2 |
|
two-dimensional materials |
2 |
|
unidirectional domain alignment |
2 |
|
wse2 |
2 |
|
wurtzite |
2 |
|
6h-sic(0001) |
1 |
|
a-carbon |
1 |
|
ab initio |
1 |
|
ab initio calculations |
1 |
|
adsorption/desorption kinetics |
1 |
|
alloying |
1 |
|
aluminium compounds |
1 |
|
amorphous-like |
1 |
|
anisotropy |
1 |
|
atomic and molecular physics |
1 |
|
atomic structure |
1 |
|
band alignment |
1 |
|
bi2se3 |
1 |
|
c atoms |
1 |
|
contact angle methodology |
1 |
|
contact angles on hydrophobic surfaces |
1 |
|
crystallinities |
1 |
|
defects |
1 |
|
density-functional study |
1 |
|
dislocation structure |
1 |
|
domain boundary |
1 |
|
dynamics |
1 |
|
edge state |
1 |
|
effective coupling |
1 |
|
electronic and magnetic properties |
1 |
|
equation of state for interfacial tensions |
1 |
|
first-principle study |
1 |
|
first-principles study |
1 |
|
gan film |
1 |
|
gap opening |
1 |
|
gas source molecular beam epitaxy (gsmbe) |
1 |
|
ge atom |
1 |
|
graphene nanoribbons |
1 |
|
graphene sheets |
1 |
|
growth conditions |
1 |
|
heterostructure |
1 |
|
high magnetic fields |
1 |
|
high-field |
1 |
|
high-index bi2se3 |
1 |
|
high-index surfaces |
1 |
|
iii-nitride |
1 |
|
iii-v semiconductors |
1 |
|
indium |
1 |
|
indium compounds |
1 |
|
inn |
1 |
|
inn/gan(111) |
1 |
|
inversion domain boundaries |
1 |
|
kinetics |
1 |
|
leed |
1 |
|
misfit dislocations |
1 |
|
molecular beams |
1 |
|
molecular-beam epitaxy |
1 |
|
monolayers |
1 |
|
monte carlo simulations |
1 |
|
mose2 |
1 |
|
mose2 bilayer |
1 |
|
nanoclusters |
1 |
|
negative magneto-resistance |
1 |
|
orbital electrons |
1 |
|
oxygen adsorption |
1 |
|
point defects |
1 |
|
quantum theory |
1 |
|
quantum wires |
1 |
|
reconstruction |
1 |
|
segregation |
1 |
|
si/sige |
1 |
|
size and shape |
1 |
|
spin-polarized |
1 |
|
stacking orders |
1 |
|
step |
1 |
|
step formation and bunching |
1 |
|
stm/s |
1 |
|
strain |
1 |
|
superlattices |
1 |
|
surface |
1 |
|
surface defects |
1 |
|
surface diffusion |
1 |
|
surface nucleation |
1 |
|
surface reconstruction |
1 |
|
surface segregation |
1 |
|
surface state |
1 |
|
surface structure, morphology, roughness, and topography |
1 |
|
surface termination |
1 |
|
tmds |
1 |
|
transport dimensionality |
1 |
|
twin domain |
1 |
|
van der waals heterojunctions |
1 |
|
vapour adsorption on hydrophobic surfaces |
1 |
|
weak-antilocalization |
1 |
|
weak-localization |
1 |
