| PiH/235/22 | Optimising the Performance of SiC Devices Through the Control of Atomic Scale Deep Level Defect | 465848 | 2021 |
| PiH/335/21 | Optimising the Performance of SiC Devices Through the Control of Atomic Scale Deep Level Defect | 301500 | 2021 |
| PiH/238/21 | Optimising the Performance of SiC Devices Through the Control of Atomic Scale Deep Level Defect | 804000 | 2021 |
| ITS/215/20FP | Optimising the Performance of SiC Devices Through the Control of Atomic Scale Deep Level Defect | 985500 | 2020 |
| 2019A1515012164 | 施主受主共掺杂ZnO基高介电常数高透明薄膜的制备及其特性研究 | 125600 | 2019 |
| HKU 7033/05P | Natures and identities of defects in 6H silicon carbide induced by low energy electron irradiation | 321000 | 2005 |
| HKU 7107/02P | Experimental studies of native defects in gallium antimonide | 390000 | 2002 |
| HKU 7085/01P | Positron annihilation spectroscopic studies of vacancy type defects in 6H-SiC: microstructural investigation of the material's deep level defects | 371406 | 2001 |
| HKU 703108P | Defect study of ZnO materials | 343700 | 2008 |
| HKU 703612P | Investigating the origins of defects in ZnO: case studies of the green luminescence and the electrically active deep level states | 497750 | 2012 |
| HKU 7037/06P | Ion implantation of zinc oxide material: dopant activation and defect characterization | 538460 | 2006 |
| HKU 7134/99P | Positron annihilation spectroscopic studies of gallium antimonide system | 405000 | 1999 |
| HKU 7113/98P | Positron studies of SiC with a view to manufacturing a high efficiency positron moderator | 435000 | 1998 |
| HKU 7032/04P | Experimental studies of defects in ZnO: electrical and optical activities of O-vacancy and Zn-vacancy related defects | 283000 | 2004 |
| G_HK026/07 | Ion-implantation of ZnO material: dopant activation and defect characterization | 36400 | 2007 |
| 17302115 | The Magnetic Properties of Cu-doped ZnO | 706972 | 2015 |
