| Title | Author(s) | Year | View Count |
 | Adenosine diphosphate-ribosylation factor 6 is required for epidermal growth factor-induced glioblastoma cell proliferation | Li, M; Wang, J; Ng, SSM; Chan, CY; He, ML; Yu, F; Lai, L; Shi, C; Chen, Y; Yew, DT; Kung, HF; Lin, MCM | 2009 | 173 |
 | Geocrhonology and pre-mesozoic evolution of the Namjagbarwa Group in the Eatern Himalayan syntax | Zhang, ZM; Wang, JL; Zhao, G; Shen, K; Shi, C | 2008 | 99 |
| Geochronology and Precambrian tectonic evolution of the Namche Barwa complex from the Eastern Himalayan syntaxis, Tibet | Zhang, ZM; Wang, JL; Zhao, GC; Shi, C | 2008 | 175 |
| A sediment budget of the lower Yellow River, China, over the period from 1855 to 1968 | Shi, C; Zhang, DD | 2005 | 126 |
| Analysis on Chemical Composition of Rainfall on the Tibet Plateau | Zhang, D; Shi, C; Jiala, J | 2005 | 93 |
 | Natural water softening processes associated with waterfall effects in Karst areas | Zhang, D; Peart, M; Shi, C; Zhang, Y; Zhu, A; Chen, X | 2004 | 99 |
| Processes and mechanisms of dynamic channel adjustment to delta progradation: The case of the mouth channel of the Yellow River, China | Shi, C; Zhang, D | 2003 | 126 |
| A Study of Sediment Budget of the Yellow River Delta: The Case of Diaokohe Lobe | Shi, C; Zhang, D; You, L; Li, B | 2003 | 115 |
| Rapid changes of precipitation pH in Qinghai Province, the northeastern Tibetan Plateau | Zhang, DD; Jim, CY; Peart, MR; Shi, C | 2003 | 223 |
| Sediment budget of the Yellow River delta, China: The importance of dry bulk density and implications to understanding of sediment dispersal | Shi, C; Zhang, DD; You, L | 2003 | 77 |
| Atmospheric CO2, dissolution rate and formation of karren on the Tibetan Plateau | Zhang, D; Shi, C | 2002 | 153 |
| Changes in sediment yield of the Yellow River basin of China during the Holocene | Shi, C; Dian, Z; You, L | 2002 | 112 |
| CO2 partial pressure, Karst dissolution rate and karst micro-landforms on the Qinghai-Tibet Plateau | Zhang, DD; Shi, C | 2002 | 66 |
| Residual donors and compensation in metalorganic chemical vapor deposition as-grown n-GaN | Xu, X; Liu, H; Shi, C; Zhao, Y; Fung, S; Beling, CD | 2001 | 375 |
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