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Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
中國原子能科學研究院. The Journal's web site is located at
Tang, BQ; Wang, YP; Geng, B; Chen, XH; He, CH; Yang, HL2000139
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