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Article: Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf
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TitleBurnout and gate rupture of power MOS transistors with fission fragments of 252Cf
 
AuthorsTang, BQ1
Wang, YP1
Geng, B1
Chen, XH1
He, CH1
Yang, HL1
 
KeywordsPower Mos Transistor
Single Event Burnout
Single Event Gate Rupture
 
Issue Date2000
 
Publisher中國原子能科學研究院. The Journal's web site is located at http://yzjs.chinajournal.net.cn/
 
CitationYuanzineng Kexue Jishu/Atomic Energy Science And Technology, 2000, v. 34 n. 4, p. 339-343 [How to Cite?]
 
AbstractA study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252Cf source. Presented are the test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors.
 
ISSN1000-6931
2013 SCImago Journal Rankings: 0.250
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorTang, BQ
 
dc.contributor.authorWang, YP
 
dc.contributor.authorGeng, B
 
dc.contributor.authorChen, XH
 
dc.contributor.authorHe, CH
 
dc.contributor.authorYang, HL
 
dc.date.accessioned2012-10-30T06:22:16Z
 
dc.date.available2012-10-30T06:22:16Z
 
dc.date.issued2000
 
dc.description.abstractA study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252Cf source. Presented are the test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.identifier.citationYuanzineng Kexue Jishu/Atomic Energy Science And Technology, 2000, v. 34 n. 4, p. 339-343 [How to Cite?]
 
dc.identifier.epage343
 
dc.identifier.issn1000-6931
2013 SCImago Journal Rankings: 0.250
 
dc.identifier.issue4
 
dc.identifier.scopuseid_2-s2.0-0034216576
 
dc.identifier.spage339
 
dc.identifier.urihttp://hdl.handle.net/10722/172384
 
dc.identifier.volume34
 
dc.languageeng
 
dc.publisher中國原子能科學研究院. The Journal's web site is located at http://yzjs.chinajournal.net.cn/
 
dc.publisher.placeChina
 
dc.relation.ispartofYuanzineng Kexue Jishu/Atomic Energy Science and Technology
 
dc.relation.referencesReferences in Scopus
 
dc.subjectPower Mos Transistor
 
dc.subjectSingle Event Burnout
 
dc.subjectSingle Event Gate Rupture
 
dc.titleBurnout and gate rupture of power MOS transistors with fission fragments of 252Cf
 
dc.typeArticle
 
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<contributor.author>He, CH</contributor.author>
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Author Affiliations
  1. Northwest Institute of Nuclear Technology