Article: Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf

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Title	Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf
Authors	Tang, BQ1 Wang, YP1 Geng, B1 Chen, XH1 He, CH1 Yang, HL1
Keywords	Power Mos Transistor Single Event Burnout Single Event Gate Rupture
Issue Date	2000
Publisher	中國原子能科學研究院. The Journal's web site is located at http://yzjs.chinajournal.net.cn/
Citation	Yuanzineng Kexue Jishu/Atomic Energy Science And Technology, 2000, v. 34 n. 4, p. 339-343 [How to Cite?]
Abstract	A study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252Cf source. Presented are the test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors.
ISSN	1000-6931 2011 SCImago Journal Rankings: 0.029
References	References in Scopus

DC Field	Value
dc.contributor.author	Tang, BQ
dc.contributor.author	Wang, YP
dc.contributor.author	Geng, B
dc.contributor.author	Chen, XH
dc.contributor.author	He, CH
dc.contributor.author	Yang, HL
dc.date.accessioned	2012-10-30T06:22:16Z
dc.date.available	2012-10-30T06:22:16Z
dc.date.issued	2000
dc.description.abstract	A study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252Cf source. Presented are the test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors.
dc.description.nature	Link_to_subscribed_fulltext
dc.identifier.citation	Yuanzineng Kexue Jishu/Atomic Energy Science And Technology, 2000, v. 34 n. 4, p. 339-343 [How to Cite?]
dc.identifier.epage	343
dc.identifier.issn	1000-6931 2011 SCImago Journal Rankings: 0.029
dc.identifier.issue	4
dc.identifier.scopus	eid_2-s2.0-0034216576
dc.identifier.spage	339
dc.identifier.uri	http://hdl.handle.net/10722/172384
dc.identifier.volume	34
dc.language	eng
dc.publisher	中國原子能科學研究院. The Journal's web site is located at http://yzjs.chinajournal.net.cn/
dc.publisher.place	China
dc.relation.ispartof	Yuanzineng Kexue Jishu/Atomic Energy Science and Technology
dc.relation.references	References in Scopus
dc.subject	Power Mos Transistor
dc.subject	Single Event Burnout
dc.subject	Single Event Gate Rupture
dc.title	Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf
dc.type	Article

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Author Affiliations

Northwest Institute of Nuclear Technology