| Title | Author(s) | Year | View Count |
 | Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers | Zhang, ZW; Zhu, CF; Fong, WK; Leung, KK; Chan, PKL; Surya, C | 2011 | 125 |
| Degradation mechanism of GaN-based LEDs with different growth parameters | Leung, KK; Fong, WK; Chan, PKL; Surya, C | 2010 | 89 |
| Physical mechanisms for hot-electron degradation in GaN light-emitting diodes | Leung, KK; Fong, WK; Chan, PKL; Surya, C | 2010 | 145 |
| Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors | Lui, HF; Fong, WK; Surya, C; Cheung, CH; Djurišić, AB | 2006 | 208 |
 | Doping of GaN by Mg diffusion | To, T; Djurisic, AB; Xie, MH; Fong, WK; Surya, C | 2002 | 403 |
 | Factors affecting people's selection of dentists in Hong Kong | Lo, ECM; Chow, SM; Chung, CH; Chung, SYK; Fernando, NR; Fong, WK; Ho, CK; Hui, MC; Hung, WK | 1998 | 103 |
| Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs | Surya, Charles; Wang, W; Fong, WK; Chan, CH; Lai, PT | 1997 | 59 |
| Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs | Surya, Charles; Wang, W; Fong, WK; Chan, CH; Lai, PT | 1996 | 332 |
| Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs | Surya, C; Wang, W; Fong, WK; Chan, CH; Lai, PT | 1996 | 55 |
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