Results 1 to 9 of 9
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TypeTitleAuthor(s)YearViews
Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layersZhang, ZW; Zhu, CF; Fong, WK; Leung, KK; Chan, PKL; Surya, C2011142
 
Physical mechanisms for hot-electron degradation in GaN light-emitting diodesLeung, KK; Fong, WK; Chan, PKL; Surya, C2010136
 
Degradation mechanism of GaN-based LEDs with different growth parametersLeung, KK; Fong, WK; Chan, PKL; Surya, C201090
 
Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectorsLui, HF; Fong, WK; Surya, C; Cheung, CH; Djurišić, AB2006220
 
Doping of GaN by Mg diffusionTo, T; Djurisic, AB; Xie, MH; Fong, WK; Surya, C2002391
 
Factors affecting people's selection of dentists in Hong KongLo, ECM; Chow, SM; Chung, CH; Chung, SYK; Fernando, NR; Fong, WK; Ho, CK; Hui, MC; Hung, WK1998106
 
Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETsSurya, Charles; Wang, W; Fong, WK; Chan, CH; Lai, PT199770
 
Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETsSurya, C; Wang, W; Fong, WK; Chan, CH; Lai, PT199669
 
Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETsSurya, Charles; Wang, W; Fong, WK; Chan, CH; Lai, PT1996313
 
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