Results 1 to 8 of 8
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TypeTitleAuthor(s)YearViews
Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers
Journal:
Solid-State Electronics
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Zhang, ZW; Zhu, CF; Fong, WK; Leung, KK; Chan, PKL; Surya, C2011198
 
Physical mechanisms for hot-electron degradation in GaN light-emitting diodes
Journal:
Journal of Applied Physics
Publisher:
American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Leung, KK; Fong, WK; Chan, PKL; Surya, C2010195
 
Degradation mechanism of GaN-based LEDs with different growth parameters
Proceedings/Conference:
Materials Research Society Symposium Proceedings
Publisher:
Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Leung, KK; Fong, WK; Chan, PKL; Surya, C2010138
 
Fabrication and characterization of indium-tin-oxide/GaN visible-blind UV detectors
Proceedings/Conference:
Physica Status Solidi (C) Current Topics in Solid State Physics
Publisher:
Wiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Lui, HF; Fong, WK; Surya, C; Cheung, CH; Djurišić, AB2006278
 
Doping of GaN by Mg diffusion
Publisher:
IEEE.
To, T; Djurisic, AB; Xie, MH; Fong, WK; Surya, C2002417
 
Effects of low-energy back surface gettering on the properties of 1/f noise in n-channel nitrided MOSFETs
Proceedings/Conference:
IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Surya, Charles; Wang, W; Fong, WK; Chan, CH; Lai, PT199799
 
Effects of Ar+ back-surface gettering on the properties of flicker noise in n-channel nitrided MOSFETs
Journal:
Solid-State Electronics
Publisher:
Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse
Surya, C; Wang, W; Fong, WK; Chan, CH; Lai, PT1996104
 
Properties of Si-SiO2 interface traps due to low-energy Ar+ backsurface bombardment in n-channel nitrided MOSFETs
Proceedings/Conference:
I E E E Hong Kong Electron Devices Meeting Proceedings
Publisher:
IEEE.
Surya, C; Wang, W; Fong, WK; Chan, CH; Lai, PT1996349
 
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