Showing results 6 to 8 of 8
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Title | Author(s) | Issue Date | |
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Full-scale atomistic simulations of dislocations in Ni crystal by embedded-atom method Journal:Philosophical Magazine | 2005 | ||
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric Journal:IEEE Transactions on Electron Devices | 2017 | ||
2009 |