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Article: Full-scale atomistic simulations of dislocations in Ni crystal by embedded-atom method
Title | Full-scale atomistic simulations of dislocations in Ni crystal by embedded-atom method |
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Authors | |
Issue Date | 2005 |
Publisher | Taylor & Francis Ltd. The Journal's web site is located at http://www.tandf.co.uk/journals/titles/14786435.asp |
Citation | Philosophical Magazine, 2005, v. 85 n. 17, p. 1917-1929 How to Cite? |
Abstract | Full-scale atomistic simulations by the nudged elastic band method are performed to determine the energetics and core structures of dislocations in a Ni lattice using an embedded-atom method potential. We find that for an edge dislocation, the potential yields very weak coupling between the partials which move almost individually. For a screw dislocation, the coupling between the partials is somewhat stronger and the partials move with some dependence. As expected, the results indicate that stacking fault energy has a controlling influence on the coupling behaviour of the partials. The effective Peierls energies and stresses are 1.30 × 10-6 eV/Å and 2.79 × 10-6 μ for the edge dislocation, and 1.62 × 10 -4 eV/Å and 2.02 × 10-4 μ for the screw dislocation. © 2005 Taylor & Francis Group Ltd. |
Persistent Identifier | http://hdl.handle.net/10722/75655 |
ISSN | 2023 Impact Factor: 1.5 2023 SCImago Journal Rankings: 0.366 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Wen, M | en_HK |
dc.contributor.author | Ngan, AHW | en_HK |
dc.contributor.author | Fukuyama, S | en_HK |
dc.contributor.author | Yokogawa, K | en_HK |
dc.date.accessioned | 2010-09-06T07:13:17Z | - |
dc.date.available | 2010-09-06T07:13:17Z | - |
dc.date.issued | 2005 | en_HK |
dc.identifier.citation | Philosophical Magazine, 2005, v. 85 n. 17, p. 1917-1929 | en_HK |
dc.identifier.issn | 1478-6435 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/75655 | - |
dc.description.abstract | Full-scale atomistic simulations by the nudged elastic band method are performed to determine the energetics and core structures of dislocations in a Ni lattice using an embedded-atom method potential. We find that for an edge dislocation, the potential yields very weak coupling between the partials which move almost individually. For a screw dislocation, the coupling between the partials is somewhat stronger and the partials move with some dependence. As expected, the results indicate that stacking fault energy has a controlling influence on the coupling behaviour of the partials. The effective Peierls energies and stresses are 1.30 × 10-6 eV/Å and 2.79 × 10-6 μ for the edge dislocation, and 1.62 × 10 -4 eV/Å and 2.02 × 10-4 μ for the screw dislocation. © 2005 Taylor & Francis Group Ltd. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Taylor & Francis Ltd. The Journal's web site is located at http://www.tandf.co.uk/journals/titles/14786435.asp | en_HK |
dc.relation.ispartof | Philosophical Magazine | en_HK |
dc.title | Full-scale atomistic simulations of dislocations in Ni crystal by embedded-atom method | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1478-6435&volume=85&issue=17&spage=1917&epage=1929&date=2005&atitle=Full-scale+atomistic+simulations+of+dislocations+in+Ni+crystal+by+embedded-atom+method | en_HK |
dc.identifier.email | Ngan, AHW:hwngan@hkucc.hku.hk | en_HK |
dc.identifier.authority | Ngan, AHW=rp00225 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1080/14786430500070966 | en_HK |
dc.identifier.scopus | eid_2-s2.0-27944494332 | en_HK |
dc.identifier.hkuros | 98513 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-27944494332&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 85 | en_HK |
dc.identifier.issue | 17 | en_HK |
dc.identifier.spage | 1917 | en_HK |
dc.identifier.epage | 1929 | en_HK |
dc.identifier.isi | WOS:000229761700007 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Wen, M=7102904680 | en_HK |
dc.identifier.scopusauthorid | Ngan, AHW=7006827202 | en_HK |
dc.identifier.scopusauthorid | Fukuyama, S=7005814763 | en_HK |
dc.identifier.scopusauthorid | Yokogawa, K=7004856036 | en_HK |
dc.identifier.citeulike | 229671 | - |
dc.identifier.issnl | 1478-6435 | - |