Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | |
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Positron beam study of low-temperature-grown GaAs with aluminum delta layers Journal:Applied Surface Science | 1999 | ||
Positron studies of arsenic precipitation in low-temperature GaAs grown by molecular beam epitaxy Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting | 1997 | ||
Structural and defect characterization of GaAs and Al xGa 1-xAs grown at low temperature by molecular beam epitaxy Journal:Journal of Applied Physics | 1997 | ||
A study of the vacancy-defect distribution in a GaAs/Al xGa 1-xAs multi-layer structure grown at low temperature Journal:Journal of Crystal Growth | 1999 |