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Article: A study of the vacancy-defect distribution in a GaAs/Al xGa 1-xAs multi-layer structure grown at low temperature

TitleA study of the vacancy-defect distribution in a GaAs/Al xGa 1-xAs multi-layer structure grown at low temperature
Authors
Issue Date1999
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 1999, v. 196 n. 1, p. 53-61 How to Cite?
AbstractWe have grown a multilayer structure of GaAs and Al xGa 1-xAs (x = 0.25) by molecular beam epitaxy at low substrate temperature (250°C) in order to investigate the effects of annealing on arsenic precipitation and vacancy-defect formation. The as-grown heterostructure contained ∼5 × 10 17 cm -3 gallium vacancies, but information about the individual layers was lost because the layer width ( ∼ 45 nm) was smaller than the average positron diffusion length ( ∼ 70 nm). Annealing at 500 and 600°C showed increases in the S-parameter (above the bulk value) of ∼2.5% and ∼1.5%, respectively, smaller than for a single LT-GaAs layer (∼3-4%). We explain this phenomenon by suggesting that the excess arsenic which migrates from the material with the higher precipitate/matrix energy (LT-Al xGa 1-xAs) reduces the gallium vacancy concentration in the LT-GaAs and hence the S-parameter. This hypothesis is supported by SIMS data which shows a build-up of As in the LT-GaAs layers, and TEM images which indicate that arsenic precipitation occurs to a greater extent in the LT-GaAs than in the LT-Al xGa 1-xAs. © 1999 Published by Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/174779
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
References

 

DC FieldValueLanguage
dc.contributor.authorFleischer, Sen_HK
dc.contributor.authorSurya, Cen_HK
dc.contributor.authorHu, YFen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorSmith, TLen_HK
dc.contributor.authorMoulding, KMen_HK
dc.contributor.authorMissous, Men_HK
dc.date.accessioned2012-11-26T08:47:24Z-
dc.date.available2012-11-26T08:47:24Z-
dc.date.issued1999en_HK
dc.identifier.citationJournal Of Crystal Growth, 1999, v. 196 n. 1, p. 53-61en_HK
dc.identifier.issn0022-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174779-
dc.description.abstractWe have grown a multilayer structure of GaAs and Al xGa 1-xAs (x = 0.25) by molecular beam epitaxy at low substrate temperature (250°C) in order to investigate the effects of annealing on arsenic precipitation and vacancy-defect formation. The as-grown heterostructure contained ∼5 × 10 17 cm -3 gallium vacancies, but information about the individual layers was lost because the layer width ( ∼ 45 nm) was smaller than the average positron diffusion length ( ∼ 70 nm). Annealing at 500 and 600°C showed increases in the S-parameter (above the bulk value) of ∼2.5% and ∼1.5%, respectively, smaller than for a single LT-GaAs layer (∼3-4%). We explain this phenomenon by suggesting that the excess arsenic which migrates from the material with the higher precipitate/matrix energy (LT-Al xGa 1-xAs) reduces the gallium vacancy concentration in the LT-GaAs and hence the S-parameter. This hypothesis is supported by SIMS data which shows a build-up of As in the LT-GaAs layers, and TEM images which indicate that arsenic precipitation occurs to a greater extent in the LT-GaAs than in the LT-Al xGa 1-xAs. © 1999 Published by Elsevier Science B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_HK
dc.relation.ispartofJournal of Crystal Growthen_HK
dc.rightsJournal of Crystal Growth. Copyright © Elsevier BV.-
dc.titleA study of the vacancy-defect distribution in a GaAs/Al xGa 1-xAs multi-layer structure grown at low temperatureen_HK
dc.typeArticleen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0022-0248(98)00608-3-
dc.identifier.scopuseid_2-s2.0-0032784885en_HK
dc.identifier.hkuros39292-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032784885&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume196en_HK
dc.identifier.issue1en_HK
dc.identifier.spage53en_HK
dc.identifier.epage61en_HK
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridFleischer, S=7103394445en_HK
dc.identifier.scopusauthoridSurya, C=7003939256en_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridSmith, TL=7405497420en_HK
dc.identifier.scopusauthoridMoulding, KM=6701466356en_HK
dc.identifier.scopusauthoridMissous, M=7007147933en_HK

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