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Title | Author(s) | Issue Date | Views | |
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Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer Journal:IEEE Transactions on Device and Materials Reliability | 2017 | 50 | ||
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer Journal:IEEE Transactions on Electron Devices | 2017 | |||
2016 | 49 | |||
2015 |