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Conference Paper: Sensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator

TitleSensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulator
Authors
Tang, WMLeung, CHLai, PT
Issue Date2007
Citation
2007 International Semiconductor Device Research Symposium, Isdrs, 2007 How to Cite?
DOI: http://dx.doi.org/10.1109/ISDRS.2007.4422251
AbstractA novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300 °C. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO2 is a promising gate insulator to substitute SiO 2 for preparing high-performance MISiC Schottky hydrogen sensor. ©2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/99575
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorTang, WMen_HK
dc.contributor.authorLeung, CHen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2010-09-25T18:35:57Z-
dc.date.available2010-09-25T18:35:57Z-
dc.date.issued2007en_HK
dc.identifier.citation2007 International Semiconductor Device Research Symposium, Isdrs, 2007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99575-
dc.description.abstractA novel Schottky-diode hydrogen sensor with high-k material HfO2 as gate insulator has been fabricated and studied. The influences of hydrogen concentration and temperature on hydrogen-sensing performance of the device are investigated. Experimental results show that the sensor demonstrates high sensitivity, rapid and stable response, especially at a high operating temperature of 300 °C. These sensing characteristics provide the sensor potential applications for detecting hydrogen leakage in harsh environments. In conclusion, HfO2 is a promising gate insulator to substitute SiO 2 for preparing high-performance MISiC Schottky hydrogen sensor. ©2007 IEEE.en_HK
dc.languageengen_HK
dc.relation.ispartof2007 International Semiconductor Device Research Symposium, ISDRSen_HK
dc.titleSensing characteristics of a novel MISiC Schottky-diode hydrogen sensor with HfO2 as gate insulatoren_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLeung, CH:chleung@eee.hku.hken_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLeung, CH=rp00146en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ISDRS.2007.4422251en_HK
dc.identifier.scopuseid_2-s2.0-44949238783en_HK
dc.identifier.hkuros150349en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44949238783&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.epage06en_HK
dc.identifier.scopusauthoridTang, WM=24438163600en_HK
dc.identifier.scopusauthoridLeung, CH=7402612415en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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