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Conference Paper: Reduction of Oxide Charges for GaN MISFET with SiO2 Gate Dielectric through NO Annealing

TitleReduction of Oxide Charges for GaN MISFET with SiO2 Gate Dielectric through NO Annealing
Authors
Lin, LLai, PTLau, KM
Issue Date2006
Citation
Proceedings of RIUPEEEC, p. 45-48 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/99301

 

DC FieldValueLanguage
dc.contributor.authorLin, Len_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLau, KMen_HK
dc.date.accessioned2010-09-25T18:24:07Z-
dc.date.available2010-09-25T18:24:07Z-
dc.date.issued2006en_HK
dc.identifier.citationProceedings of RIUPEEEC, p. 45-48en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99301-
dc.languageengen_HK
dc.relation.ispartofProceedings of RIUPEEECen_HK
dc.titleReduction of Oxide Charges for GaN MISFET with SiO2 Gate Dielectric through NO Annealingen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.hkuros135797en_HK
dc.identifier.spage45en_HK
dc.identifier.epage48en_HK

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