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Conference Paper: The Excitonic effects in group III nitrides: modeling the dielectric function of GaN, AIN and AIGaN

TitleThe Excitonic effects in group III nitrides: modeling the dielectric function of GaN, AIN and AIGaN
Authors
Djurisic, ALi, EH
Issue Date2001
Citation
International Conference on Materials for Advanced Technologies, Symposium N: Materials for Optoelectronics and High Frequency Electronics Applications, Singapore, 1 - 6 July 2001 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/99075

 

DC FieldValueLanguage
dc.contributor.authorDjurisic, Aen_HK
dc.contributor.authorLi, EHen_HK
dc.date.accessioned2010-09-25T18:14:49Z-
dc.date.available2010-09-25T18:14:49Z-
dc.date.issued2001en_HK
dc.identifier.citationInternational Conference on Materials for Advanced Technologies, Symposium N: Materials for Optoelectronics and High Frequency Electronics Applications, Singapore, 1 - 6 July 2001-
dc.identifier.urihttp://hdl.handle.net/10722/99075-
dc.languageengen_HK
dc.relation.ispartofInternational Conference on Materials for Advanced Technologiesen_HK
dc.titleThe Excitonic effects in group III nitrides: modeling the dielectric function of GaN, AIN and AIGaNen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurisic, A: dalek@hkusua.hku.hken_HK
dc.identifier.authorityDjurisic, A=rp00690en_HK
dc.identifier.hkuros72514en_HK

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