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Conference Paper: A low-power high-output-driving CMOS voltage reference with ±0.5% trimming accuracy

TitleA low-power high-output-driving CMOS voltage reference with ±0.5% trimming accuracy
Authors
Ng, DCWWong, WYTWong, NWan, KCWan, KWHKwong, DKK
Issue Date2007
Citation
The 19th International Conference on Microelectronics (ICM 2007), Cairo, Egypt, 29-31 December 2007. In Proceedings of the International Conference on Microelectronics, 2007, p. 325-328 How to Cite?
DOI: http://dx.doi.org/10.1109/ICM.2007.4497721
AbstractWe present a CMOS bandgap voltage reference with a low quiescent current and high output current driving capability of up to 1.5mA. The circuit achieves a very low supply current of 11μA, a low power of 27μW, a line regulation of ±2.5mV/V and a load regulation of 14mV/mA. The bandgap reference is implemented in a 1μm pure CMOS process with Vthn ≈ |V thp| ≈ 0.9V at 25°C. Experimental results show the silicon measurements are in good agreement with simulations. The proposed reference circuit constitutes a versatile solution in switching mode power supply (SMPS) and portable applications, due to its driving capability and low power consumption. © 2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/99033
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorNg, DCWen_HK
dc.contributor.authorWong, WYTen_HK
dc.contributor.authorWong, Nen_HK
dc.contributor.authorWan, KCen_HK
dc.contributor.authorWan, KWHen_HK
dc.contributor.authorKwong, DKK-
dc.date.accessioned2010-09-25T18:13:08Z-
dc.date.available2010-09-25T18:13:08Z-
dc.date.issued2007en_HK
dc.identifier.citationThe 19th International Conference on Microelectronics (ICM 2007), Cairo, Egypt, 29-31 December 2007. In Proceedings of the International Conference on Microelectronics, 2007, p. 325-328en_HK
dc.identifier.urihttp://hdl.handle.net/10722/99033-
dc.description.abstractWe present a CMOS bandgap voltage reference with a low quiescent current and high output current driving capability of up to 1.5mA. The circuit achieves a very low supply current of 11μA, a low power of 27μW, a line regulation of ±2.5mV/V and a load regulation of 14mV/mA. The bandgap reference is implemented in a 1μm pure CMOS process with Vthn ≈ |V thp| ≈ 0.9V at 25°C. Experimental results show the silicon measurements are in good agreement with simulations. The proposed reference circuit constitutes a versatile solution in switching mode power supply (SMPS) and portable applications, due to its driving capability and low power consumption. © 2007 IEEE.-
dc.languageengen_HK
dc.relation.ispartofProceedings of the International Conference on Microelectronics (ICM) 2007en_HK
dc.titleA low-power high-output-driving CMOS voltage reference with ±0.5% trimming accuracyen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailWong, N: nwong@eee.hku.hken_HK
dc.identifier.authorityWong, N=rp00190en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ICM.2007.4497721-
dc.identifier.scopuseid_2-s2.0-51849155993-
dc.identifier.hkuros136425en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-51849155993&selection=ref&src=s&origin=recordpage-
dc.identifier.spage325en_HK
dc.identifier.epage328en_HK
dc.identifier.scopusauthoridNg, DCW=7201645733-
dc.identifier.scopusauthoridWong, WYT=22735387500-
dc.identifier.scopusauthoridWong, N=35235551600-
dc.identifier.scopusauthoridWan, KC=36848884000-
dc.identifier.scopusauthoridWan, KHM=26432315000-
dc.identifier.scopusauthoridKwong, DKK=22734059200-
dc.customcontrol.immutablesml 160111 - merged-

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