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Article: Close-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography

TitleClose-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithography
Authors
KeywordsArrays
Gallium compounds
III-V semiconductors
Light transmission
Nanolithography
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2009, v. 95 n. 13 How to Cite?
AbstractA self-assembled hexagonal close-packed hemiellipsoidal photonic crystal structure was fabricated on GaN material. An ordered monolayer silica nanosphere coating served as a hard mask in an inductively coupled plasma etching process. The shape of the arrayed hemiellipsoids can be controlled by adjusting the etch selectivities and durations according to the fabrication model. The existence of a photonic band gap is established through planar transmissivity measurement whereby a transmission dip centered at 440 nm was identified. A threefold enhancement in light extraction was achieved, as determined from the measured angular photoluminescence emission pattern. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/92990
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFu, WYen_HK
dc.contributor.authorWong, KKYen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-09-24T01:29:20Z-
dc.date.available2010-09-24T01:29:20Z-
dc.date.issued2009en_HK
dc.identifier.citationApplied Physics Letters, 2009, v. 95 n. 13en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92990-
dc.description.abstractA self-assembled hexagonal close-packed hemiellipsoidal photonic crystal structure was fabricated on GaN material. An ordered monolayer silica nanosphere coating served as a hard mask in an inductively coupled plasma etching process. The shape of the arrayed hemiellipsoids can be controlled by adjusting the etch selectivities and durations according to the fabrication model. The existence of a photonic band gap is established through planar transmissivity measurement whereby a transmission dip centered at 440 nm was identified. A threefold enhancement in light extraction was achieved, as determined from the measured angular photoluminescence emission pattern. © 2009 American Institute of Physics.en_HK
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsApplied Physics Letters. Copyright © American Institute of Physics.-
dc.rightsCopyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2009, v. 95 n. 13 article no. 133125 and may be found at http://apl.aip.org/resource/1/applab/v95/i13/p133125_s1-
dc.subjectArrays-
dc.subjectGallium compounds-
dc.subjectIII-V semiconductors-
dc.subjectLight transmission-
dc.subjectNanolithography-
dc.titleClose-packed hemiellipsoid arrays: A photonic band gap structure patterned by nanosphere lithographyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=95 &issue=13 article no. 133125&spage=&epage=&date=2009&atitle=Closed-packed+hemiellipsoid+arrays:+a+photonic+band+gap+structure+patterned+by+nanosphere+lithography-
dc.identifier.emailWong, KKY:kywong@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityWong, KKY=rp00189en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3238564en_HK
dc.identifier.scopuseid_2-s2.0-70349690452en_HK
dc.identifier.hkuros164110-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70349690452&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume95en_HK
dc.identifier.issue13en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000270458000071-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFu, WY=24481323900en_HK
dc.identifier.scopusauthoridWong, KKY=36456599700en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

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