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Conference Paper: Wideband lumped element model for on-chip interconnects on lossy silicon substrate

TitleWideband lumped element model for on-chip interconnects on lossy silicon substrate
Authors
KeywordsFrequency-dependent
Interconnect
Lumped element model
Silicon substrate
Transmission line
Wideband
Issue Date2006
PublisherIEEE
Citation
Digest Of Papers - Ieee Radio Frequency Integrated Circuits Symposium, 2006, v. 2006, p. 478-481 How to Cite?
AbstractThis work presents the fully lumped element model for wideband on-chip interconnects, with large scalability of line lengths up to 8000 μm, and widths down to 100 nm. Both the series and the shunt lumped elements of the model are determined based on the frequency asymptotic technique without any optimization. The equivalent lumped circuit is derived and verified to accurately recover the frequency-dependent parameters up to 40 GHz, where all the parasitic effects are accounted for based on the EM simulation and measurement. The convergence of the cascaded lumped element model is analyzed for the minimal requirement of desired wideband and distributed performance. The frequency responses of the proposed model agree well with those of the distributed transmission line model and measurements. Finally, the model is validated by comparing simulated and measured Scattering-parameters.
Persistent Identifierhttp://hdl.handle.net/10722/92860
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorSun, Sen_HK
dc.contributor.authorKumar, Ren_HK
dc.contributor.authorRustagi, SCen_HK
dc.contributor.authorMouthaan, Ken_HK
dc.contributor.authorWong, TKSen_HK
dc.date.accessioned2010-09-22T05:01:49Z-
dc.date.available2010-09-22T05:01:49Z-
dc.date.issued2006en_HK
dc.identifier.citationDigest Of Papers - Ieee Radio Frequency Integrated Circuits Symposium, 2006, v. 2006, p. 478-481en_HK
dc.identifier.issn1529-2517en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92860-
dc.description.abstractThis work presents the fully lumped element model for wideband on-chip interconnects, with large scalability of line lengths up to 8000 μm, and widths down to 100 nm. Both the series and the shunt lumped elements of the model are determined based on the frequency asymptotic technique without any optimization. The equivalent lumped circuit is derived and verified to accurately recover the frequency-dependent parameters up to 40 GHz, where all the parasitic effects are accounted for based on the EM simulation and measurement. The convergence of the cascaded lumped element model is analyzed for the minimal requirement of desired wideband and distributed performance. The frequency responses of the proposed model agree well with those of the distributed transmission line model and measurements. Finally, the model is validated by comparing simulated and measured Scattering-parameters.en_HK
dc.languageengen_HK
dc.publisherIEEEen_HK
dc.relation.ispartofDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposiumen_HK
dc.subjectFrequency-dependenten_HK
dc.subjectInterconnecten_HK
dc.subjectLumped element modelen_HK
dc.subjectSilicon substrateen_HK
dc.subjectTransmission lineen_HK
dc.subjectWidebanden_HK
dc.titleWideband lumped element model for on-chip interconnects on lossy silicon substrateen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailSun, S:sunsheng@hku.hken_HK
dc.identifier.authoritySun, S=rp01431en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-33845903896en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33845903896&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume2006en_HK
dc.identifier.spage478en_HK
dc.identifier.epage481en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridSun, S=7404509453en_HK
dc.identifier.scopusauthoridKumar, R=9337400600en_HK
dc.identifier.scopusauthoridRustagi, SC=6701386088en_HK
dc.identifier.scopusauthoridMouthaan, K=15753835900en_HK
dc.identifier.scopusauthoridWong, TKS=7403531460en_HK

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