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Article: Effect of hole-doping on the valence state and magnetic property in S = 1/2 spin-chain system LiCuVO4

TitleEffect of hole-doping on the valence state and magnetic property in S = 1/2 spin-chain system LiCuVO4
Authors
Du, FWei, YChen, YHu, FBie, XWang, CChen, GZou, G
KeywordsCurie Term
Hole Doping
One-Dimensional System
Issue Date2009
Citation
Solid State Sciences, 2009, v. 11 n. 11, p. 1866-1869 How to Cite?
DOI: http://dx.doi.org/10.1016/j.solidstatesciences.2009.08.008
AbstractThe valence state and magnetic properties of hole-doped LiCuVO4 are investigated. By analyzing the Cu 2p core-level photoemission spectra, the holes are suggested to be introduced into Cu2+ site in the formation of Cu3+ ion. The calculation of effective moment also confirms the presence of nonmagnetic Cu3+ ion which should be responsible for the decrease of high-temperature susceptibility after hole doping. At low temperature, the antiferromagnetic transition at 26 K and 2.3 K disappears due to the enhancement of Curie term. Magnetic hysteresis at 2 K shows that there exists a small ferromagnetic moment of 0.15 emu/g in Li0.9CuVO4. © 2009 Elsevier Masson SAS. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/92373
ISSN
1293-2558
2021 Impact Factor: 3.752
2020 SCImago Journal Rankings: 0.565
ISI Accession Number ID
WOS:000272116800004
Funding AgencyGrant Number
Chinese National Science Foundation50672031
Special Funds for Major State Basic Research Project of China2002CB211802
Program for Changjiang Scholar and Innovative Research Team in UniversityIRT0625
Jilin Project of Research and Development20060511
Funding Information:

This work was sponsored by the Chinese National Science Foundation under Grant No. 50672031; the Special Funds for Major State Basic Research Project of China under Grant No. 2002CB211802 and Program for Changjiang Scholar and Innovative Research Team in University (IRT0625); supported by Jilin Project of Research and Development No. 20060511.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorDu, Fen_HK
dc.contributor.authorWei, Yen_HK
dc.contributor.authorChen, Yen_HK
dc.contributor.authorHu, Fen_HK
dc.contributor.authorBie, Xen_HK
dc.contributor.authorWang, Cen_HK
dc.contributor.authorChen, Gen_HK
dc.contributor.authorZou, Gen_HK
dc.date.accessioned2010-09-17T10:44:08Z-
dc.date.available2010-09-17T10:44:08Z-
dc.date.issued2009en_HK
dc.identifier.citationSolid State Sciences, 2009, v. 11 n. 11, p. 1866-1869en_HK
dc.identifier.issn1293-2558en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92373-
dc.description.abstractThe valence state and magnetic properties of hole-doped LiCuVO4 are investigated. By analyzing the Cu 2p core-level photoemission spectra, the holes are suggested to be introduced into Cu2+ site in the formation of Cu3+ ion. The calculation of effective moment also confirms the presence of nonmagnetic Cu3+ ion which should be responsible for the decrease of high-temperature susceptibility after hole doping. At low temperature, the antiferromagnetic transition at 26 K and 2.3 K disappears due to the enhancement of Curie term. Magnetic hysteresis at 2 K shows that there exists a small ferromagnetic moment of 0.15 emu/g in Li0.9CuVO4. © 2009 Elsevier Masson SAS. All rights reserved.en_HK
dc.languageengen_HK
dc.relation.ispartofSolid State Sciencesen_HK
dc.subjectCurie Termen_HK
dc.subjectHole Dopingen_HK
dc.subjectOne-Dimensional Systemen_HK
dc.titleEffect of hole-doping on the valence state and magnetic property in S = 1/2 spin-chain system LiCuVO4en_HK
dc.typeArticleen_HK
dc.identifier.emailChen, Y:ychenc@hkucc.hku.hken_HK
dc.identifier.authorityChen, Y=rp1318en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.solidstatesciences.2009.08.008en_HK
dc.identifier.scopuseid_2-s2.0-70350566610en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70350566610&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume11en_HK
dc.identifier.issue11en_HK
dc.identifier.spage1866en_HK
dc.identifier.epage1869en_HK
dc.identifier.isiWOS:000272116800004-
dc.identifier.citeulike5489445-
dc.identifier.issnl1293-2558-

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