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Article: Structural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputtering

TitleStructural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputtering
Authors
KeywordsCo-N
Coercivity
Nitrogen Gas
Saturation Magnetization
Sputtering
Issue Date2009
PublisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2009, v. 517 n. 15, p. 4419-4424 How to Cite?
AbstractInfluence of nitrogen fractions [Nf = N2/(N2 + Ar)] and sputtering powers (Ps) on the structural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputtering have been studied. With increasing Nf from 0 to 20%, a series of phases from β-Co, β-Co (N), Co4N to Co3N were obtained. However, when Nf was fixed at 10%, only Co4N phase with different Co contents in the films was prepared, whose values of saturation magnetism (Ms) increased from 12.9 ± 8.2 Am2/kg to 103.9 ± 6.1 Am2/kg with the increase of Ps. Interstitial nitrogen caused the decrease of coercivity from 24.12 kAm- 1 (for β-Co film) to 2.71 kAm- 1. However, the addition of interstitial nitrogen was not observed to increase the Ms of β-Co. © 2009 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/92368
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
Funding AgencyGrant Number
Science and Technology Development Programmer of Jilin Province20070501
National Key Basic Research and Development Program2004CB619301
Project 985-Automotive Engineering of Jilin University
Funding Information:

The authors gratefully appreciate the financial support by the Science and Technology Development Programmer of Jilin Province (no. 20070501), and the National Key Basic Research and Development Program (grant no. 2004CB619301), Project 985-Automotive Engineering of Jilin University.

References

 

DC FieldValueLanguage
dc.contributor.authorWang, Xen_HK
dc.contributor.authorJia, Hen_HK
dc.contributor.authorZheng, WTen_HK
dc.contributor.authorChen, Yen_HK
dc.contributor.authorFeng, Sen_HK
dc.date.accessioned2010-09-17T10:43:59Z-
dc.date.available2010-09-17T10:43:59Z-
dc.date.issued2009en_HK
dc.identifier.citationThin Solid Films, 2009, v. 517 n. 15, p. 4419-4424en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92368-
dc.description.abstractInfluence of nitrogen fractions [Nf = N2/(N2 + Ar)] and sputtering powers (Ps) on the structural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputtering have been studied. With increasing Nf from 0 to 20%, a series of phases from β-Co, β-Co (N), Co4N to Co3N were obtained. However, when Nf was fixed at 10%, only Co4N phase with different Co contents in the films was prepared, whose values of saturation magnetism (Ms) increased from 12.9 ± 8.2 Am2/kg to 103.9 ± 6.1 Am2/kg with the increase of Ps. Interstitial nitrogen caused the decrease of coercivity from 24.12 kAm- 1 (for β-Co film) to 2.71 kAm- 1. However, the addition of interstitial nitrogen was not observed to increase the Ms of β-Co. © 2009 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectCo-Nen_HK
dc.subjectCoercivityen_HK
dc.subjectNitrogen Gasen_HK
dc.subjectSaturation Magnetizationen_HK
dc.subjectSputteringen_HK
dc.titleStructural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputteringen_HK
dc.typeArticleen_HK
dc.identifier.emailChen, Y:ychenc@hkucc.hku.hken_HK
dc.identifier.authorityChen, Y=rp1318en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2009.03.171en_HK
dc.identifier.scopuseid_2-s2.0-65449121886en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-65449121886&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume517en_HK
dc.identifier.issue15en_HK
dc.identifier.spage4419en_HK
dc.identifier.epage4424en_HK
dc.identifier.isiWOS:000266840100026-

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