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Article: Structural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputtering
Title | Structural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputtering | ||||||||
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Authors | |||||||||
Keywords | Co-N Coercivity Nitrogen Gas Saturation Magnetization Sputtering | ||||||||
Issue Date | 2009 | ||||||||
Publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/tsf | ||||||||
Citation | Thin Solid Films, 2009, v. 517 n. 15, p. 4419-4424 How to Cite? | ||||||||
Abstract | Influence of nitrogen fractions [Nf = N2/(N2 + Ar)] and sputtering powers (Ps) on the structural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputtering have been studied. With increasing Nf from 0 to 20%, a series of phases from β-Co, β-Co (N), Co4N to Co3N were obtained. However, when Nf was fixed at 10%, only Co4N phase with different Co contents in the films was prepared, whose values of saturation magnetism (Ms) increased from 12.9 ± 8.2 Am2/kg to 103.9 ± 6.1 Am2/kg with the increase of Ps. Interstitial nitrogen caused the decrease of coercivity from 24.12 kAm- 1 (for β-Co film) to 2.71 kAm- 1. However, the addition of interstitial nitrogen was not observed to increase the Ms of β-Co. © 2009 Elsevier B.V. All rights reserved. | ||||||||
Persistent Identifier | http://hdl.handle.net/10722/92368 | ||||||||
ISSN | 2023 Impact Factor: 2.0 2023 SCImago Journal Rankings: 0.400 | ||||||||
ISI Accession Number ID |
Funding Information: The authors gratefully appreciate the financial support by the Science and Technology Development Programmer of Jilin Province (no. 20070501), and the National Key Basic Research and Development Program (grant no. 2004CB619301), Project 985-Automotive Engineering of Jilin University. | ||||||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, X | en_HK |
dc.contributor.author | Jia, H | en_HK |
dc.contributor.author | Zheng, WT | en_HK |
dc.contributor.author | Chen, Y | en_HK |
dc.contributor.author | Feng, S | en_HK |
dc.date.accessioned | 2010-09-17T10:43:59Z | - |
dc.date.available | 2010-09-17T10:43:59Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | Thin Solid Films, 2009, v. 517 n. 15, p. 4419-4424 | en_HK |
dc.identifier.issn | 0040-6090 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/92368 | - |
dc.description.abstract | Influence of nitrogen fractions [Nf = N2/(N2 + Ar)] and sputtering powers (Ps) on the structural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputtering have been studied. With increasing Nf from 0 to 20%, a series of phases from β-Co, β-Co (N), Co4N to Co3N were obtained. However, when Nf was fixed at 10%, only Co4N phase with different Co contents in the films was prepared, whose values of saturation magnetism (Ms) increased from 12.9 ± 8.2 Am2/kg to 103.9 ± 6.1 Am2/kg with the increase of Ps. Interstitial nitrogen caused the decrease of coercivity from 24.12 kAm- 1 (for β-Co film) to 2.71 kAm- 1. However, the addition of interstitial nitrogen was not observed to increase the Ms of β-Co. © 2009 Elsevier B.V. All rights reserved. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/tsf | en_HK |
dc.relation.ispartof | Thin Solid Films | en_HK |
dc.subject | Co-N | en_HK |
dc.subject | Coercivity | en_HK |
dc.subject | Nitrogen Gas | en_HK |
dc.subject | Saturation Magnetization | en_HK |
dc.subject | Sputtering | en_HK |
dc.title | Structural and magnetic properties of Co-N thin films synthesized by direct current magnetron sputtering | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Chen, Y:ychenc@hkucc.hku.hk | en_HK |
dc.identifier.authority | Chen, Y=rp1318 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.tsf.2009.03.171 | en_HK |
dc.identifier.scopus | eid_2-s2.0-65449121886 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-65449121886&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 517 | en_HK |
dc.identifier.issue | 15 | en_HK |
dc.identifier.spage | 4419 | en_HK |
dc.identifier.epage | 4424 | en_HK |
dc.identifier.isi | WOS:000266840100026 | - |
dc.identifier.issnl | 0040-6090 | - |