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Article: Synthesis and characteristics of nanocrystalline Co/N thin film containing Co4N phase
Title | Synthesis and characteristics of nanocrystalline Co/N thin film containing Co4N phase |
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Authors | |
Keywords | Co4n Magnetic Properties Nanocrystalline Sputtering |
Issue Date | 2008 |
Publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb |
Citation | Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2008, v. 150 n. 2, p. 121-124 How to Cite? |
Abstract | Nanocrystalline Co/N thin film containing Co4N phase has been deposited on Si (1 1 1) substrate by direct current magnetron sputtering in 10% N2/N2 + Ar discharge. The composition, structure and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and superconducting quantum interference device. XRD and TEM investigations showed that the grain size of nanocrystalline Co4N was in the range 10-25 nm (with the error of ±0.2 nm). Magnetic analysis indicated that the synthesized Co/N thin films had good in-plane anisotropy. The value of Hc with the domination orientation (1 1 1) was about 97 Oe. The saturation magnetization was estimated to be 103.9 ± 6.1 emu/g, which was larger than the value of 46.5 emu/g firstly reported by Oda et al. © 2008 Elsevier B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/92183 |
ISSN | 2023 Impact Factor: 3.9 2023 SCImago Journal Rankings: 0.647 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Jia, H | en_HK |
dc.contributor.author | Wang, X | en_HK |
dc.contributor.author | Zheng, W | en_HK |
dc.contributor.author | Chen, Y | en_HK |
dc.contributor.author | Feng, S | en_HK |
dc.date.accessioned | 2010-09-17T10:38:31Z | - |
dc.date.available | 2010-09-17T10:38:31Z | - |
dc.date.issued | 2008 | en_HK |
dc.identifier.citation | Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2008, v. 150 n. 2, p. 121-124 | en_HK |
dc.identifier.issn | 0921-5107 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/92183 | - |
dc.description.abstract | Nanocrystalline Co/N thin film containing Co4N phase has been deposited on Si (1 1 1) substrate by direct current magnetron sputtering in 10% N2/N2 + Ar discharge. The composition, structure and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and superconducting quantum interference device. XRD and TEM investigations showed that the grain size of nanocrystalline Co4N was in the range 10-25 nm (with the error of ±0.2 nm). Magnetic analysis indicated that the synthesized Co/N thin films had good in-plane anisotropy. The value of Hc with the domination orientation (1 1 1) was about 97 Oe. The saturation magnetization was estimated to be 103.9 ± 6.1 emu/g, which was larger than the value of 46.5 emu/g firstly reported by Oda et al. © 2008 Elsevier B.V. All rights reserved. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Elsevier SA. The Journal's web site is located at http://www.elsevier.com/locate/mseb | en_HK |
dc.relation.ispartof | Materials Science and Engineering B: Solid-State Materials for Advanced Technology | en_HK |
dc.subject | Co4n | en_HK |
dc.subject | Magnetic Properties | en_HK |
dc.subject | Nanocrystalline | en_HK |
dc.subject | Sputtering | en_HK |
dc.title | Synthesis and characteristics of nanocrystalline Co/N thin film containing Co4N phase | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Chen, Y:ychenc@hkucc.hku.hk | en_HK |
dc.identifier.authority | Chen, Y=rp1318 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.mseb.2008.03.001 | en_HK |
dc.identifier.scopus | eid_2-s2.0-44349100277 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-44349100277&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 150 | en_HK |
dc.identifier.issue | 2 | en_HK |
dc.identifier.spage | 121 | en_HK |
dc.identifier.epage | 124 | en_HK |
dc.identifier.isi | WOS:000257366800008 | - |
dc.identifier.issnl | 0921-5107 | - |