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Article: Controllable growth of ZnO nanowires with different aspect ratios and microstructures and their photoluminescence and photosensitive properties

TitleControllable growth of ZnO nanowires with different aspect ratios and microstructures and their photoluminescence and photosensitive properties
Authors
KeywordsA1. Characterization
A1. Nanostructures
A2. Hydrothermal Crystal Growth
B1. Nanowires
B2. Semiconducting Ii-Vi Materials
Issue Date2009
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal of Crystal Growth, 2009, v. 311 n. 17, p. 4199-4206 How to Cite?
AbstractZnO nanowires with variable aspect ratios and microstructures have been prepared by a hydrothermal reaction of Zn foil and Na2C2O4 solution at 140 °C. The ZnO nanowires are single crystalline with the wurtzite structure and grow in the [0 0 0 1] direction, and their aspect ratios and microstructures can be changed by tuning the reaction time and the Na2C2O4 concentration. UV and blue-green emissions that depended on the Na2C2O4 concentration are observed from the ZnO nanowires with different aspect ratios. The photosensitivity of ZnO ultralong nanowires with honeycomb-like micropatterns is found to be about 10 at 5 V. © 2009 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/92049
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752
ISI Accession Number ID
Funding AgencyGrant Number
National Natural Science Foundation of China20573072
Specialized Research Fund for the Doctoral Program of Higher Education20060718010
Funding Information:

This work was supported by the National Natural Science Foundation of China (20573072) and Specialized Research Fund for the Doctoral Program of Higher Education (20060718010).

References

 

DC FieldValueLanguage
dc.contributor.authorLi, Len_HK
dc.contributor.authorYang, Hen_HK
dc.contributor.authorYu, Jen_HK
dc.contributor.authorChen, Yen_HK
dc.contributor.authorMa, Jen_HK
dc.contributor.authorZhang, Jen_HK
dc.contributor.authorSong, Yen_HK
dc.contributor.authorGao, Fen_HK
dc.date.accessioned2010-09-17T10:34:35Z-
dc.date.available2010-09-17T10:34:35Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal of Crystal Growth, 2009, v. 311 n. 17, p. 4199-4206en_HK
dc.identifier.issn0022-0248en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92049-
dc.description.abstractZnO nanowires with variable aspect ratios and microstructures have been prepared by a hydrothermal reaction of Zn foil and Na2C2O4 solution at 140 °C. The ZnO nanowires are single crystalline with the wurtzite structure and grow in the [0 0 0 1] direction, and their aspect ratios and microstructures can be changed by tuning the reaction time and the Na2C2O4 concentration. UV and blue-green emissions that depended on the Na2C2O4 concentration are observed from the ZnO nanowires with different aspect ratios. The photosensitivity of ZnO ultralong nanowires with honeycomb-like micropatterns is found to be about 10 at 5 V. © 2009 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_HK
dc.relation.ispartofJournal of Crystal Growthen_HK
dc.subjectA1. Characterizationen_HK
dc.subjectA1. Nanostructuresen_HK
dc.subjectA2. Hydrothermal Crystal Growthen_HK
dc.subjectB1. Nanowiresen_HK
dc.subjectB2. Semiconducting Ii-Vi Materialsen_HK
dc.titleControllable growth of ZnO nanowires with different aspect ratios and microstructures and their photoluminescence and photosensitive propertiesen_HK
dc.typeArticleen_HK
dc.identifier.emailChen, Y:ychenc@hkucc.hku.hken_HK
dc.identifier.authorityChen, Y=rp1318en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.jcrysgro.2009.06.055en_HK
dc.identifier.scopuseid_2-s2.0-68549087048en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-68549087048&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume311en_HK
dc.identifier.issue17en_HK
dc.identifier.spage4199en_HK
dc.identifier.epage4206en_HK
dc.identifier.isiWOS:000269992200010-
dc.identifier.citeulike5339094-

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