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Article: Room temperature photonic crystal band-edge lasing from nanopillar array on GaN patterned by nanosphere lithography

TitleRoom temperature photonic crystal band-edge lasing from nanopillar array on GaN patterned by nanosphere lithography
Authors
KeywordsGallium compounds
III-V semiconductors
Nanolithography
Nanostructured materials
Optical pumping
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2010, v. 107 n. 6 How to Cite?
AbstractAn ordered GaN nanopillar array fabricated by nanosphere lithography exhibited room temperature photopumped lasing via the photonic crystal band-edge effect. With a monolayer of self-assembled nanospheres as hard mask, the ordered pattern was transferred to the sample to form nanopillars by inductively coupled plasma dry etch. Under pulsed optical excitation, room temperature lasing with a low lasing threshold of 30 mJ/ cm2 was achieved. The dominant lasing peak, centered at 415.6 nm, corresponds to a band-edge mode at the -point of the band diagram. A Q factor in the range of 600-700, and spontaneous emission coupling factor of 0.021 were evaluated. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/92022
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFu, WYen_HK
dc.contributor.authorWong, KKYen_HK
dc.contributor.authorChoi, HWen_HK
dc.date.accessioned2010-09-17T10:33:46Z-
dc.date.available2010-09-17T10:33:46Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal Of Applied Physics, 2010, v. 107 n. 6en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/92022-
dc.description.abstractAn ordered GaN nanopillar array fabricated by nanosphere lithography exhibited room temperature photopumped lasing via the photonic crystal band-edge effect. With a monolayer of self-assembled nanospheres as hard mask, the ordered pattern was transferred to the sample to form nanopillars by inductively coupled plasma dry etch. Under pulsed optical excitation, room temperature lasing with a low lasing threshold of 30 mJ/ cm2 was achieved. The dominant lasing peak, centered at 415.6 nm, corresponds to a band-edge mode at the -point of the band diagram. A Q factor in the range of 600-700, and spontaneous emission coupling factor of 0.021 were evaluated. © 2010 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Applied Physics. Copyright © American Institute of Physics.-
dc.rightsCopyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Journal of Applied Physics, 2010, v. 107 n. 1, article no. 063104) and may be found at (http://link.aip.org/link/doi/10.1063/1.3353974).-
dc.subjectGallium compoundsen_HK
dc.subjectIII-V semiconductorsen_HK
dc.subjectNanolithographyen_HK
dc.subjectNanostructured materialsen_HK
dc.subjectOptical pumpingen_HK
dc.titleRoom temperature photonic crystal band-edge lasing from nanopillar array on GaN patterned by nanosphere lithographyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=107&issue=1, article no. 063104&spage=&epage=&date=2010&atitle=Room+temperature+photonic+crystal+band-edge+lasing+from+nanopillar+array+on+gan+patterned+by+nanosphere+lithography-
dc.identifier.emailWong, KKY:kywong@eee.hku.hken_HK
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_HK
dc.identifier.authorityWong, KKY=rp00189en_HK
dc.identifier.authorityChoi, HW=rp00108en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3353974en_HK
dc.identifier.scopuseid_2-s2.0-77950551993en_HK
dc.identifier.hkuros175229-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77950551993&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume107en_HK
dc.identifier.issue6en_HK
dc.identifier.isiWOS:000276210800012-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFu, WY=24481323900en_HK
dc.identifier.scopusauthoridWong, KKY=36456599700en_HK
dc.identifier.scopusauthoridChoi, HW=7404334877en_HK

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