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Article: Intragrain defects in polycrystalline silicon thin-film solar cells on glass by aluminum-induced crystallization and subsequent epitaxy

TitleIntragrain defects in polycrystalline silicon thin-film solar cells on glass by aluminum-induced crystallization and subsequent epitaxy
Authors
KeywordsIntragrain defects
Polycrystalline silicon
Renewable energy
Thin film solar cells
Issue Date2008
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
Thin Solid Films, 2008, v. 516 n. 18, p. 6409-6412 How to Cite?
AbstractThe origin of intragrain defects in polycrystalline silicon films grown by ion-assisted deposition (IAD) on aluminum-induced crystallization seed layers on glass is investigated. The microstructure of these polycrystalline Si films is bimodal, with near defect-free regions of <001> orientation along the growth direction and highly defective regions containing smaller grains of <111> orientation. In the defective regions, the dominant structural defects are twins in the seed layer and stacking faults in the IAD-grown epitaxial layer, both lying on {111} planes. The stacking faults originate at the seed layer surface due to surface imperfections, indicating that the quality of the seed layer surface plays an important role for the quality of the epitaxial Si film. We find a clear correlation between the structural crystal quality and defect-related radiative transitions at sub-bandgap wavelengths. Two dominant defect levels (~ 0.20 eV and ~ 0.29 eV below the conduction band edge) are observed and identified as impurity-related.
Persistent Identifierhttp://hdl.handle.net/10722/91407
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorRomero, MJen_HK
dc.contributor.authorJones, KMen_HK
dc.contributor.authorNorman, AGen_HK
dc.contributor.authorAlJassim, MMen_HK
dc.contributor.authorInns, Den_HK
dc.contributor.authorAberle, AGen_HK
dc.date.accessioned2010-09-17T10:18:47Z-
dc.date.available2010-09-17T10:18:47Z-
dc.date.issued2008en_HK
dc.identifier.citationThin Solid Films, 2008, v. 516 n. 18, p. 6409-6412en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91407-
dc.description.abstractThe origin of intragrain defects in polycrystalline silicon films grown by ion-assisted deposition (IAD) on aluminum-induced crystallization seed layers on glass is investigated. The microstructure of these polycrystalline Si films is bimodal, with near defect-free regions of <001> orientation along the growth direction and highly defective regions containing smaller grains of <111> orientation. In the defective regions, the dominant structural defects are twins in the seed layer and stacking faults in the IAD-grown epitaxial layer, both lying on {111} planes. The stacking faults originate at the seed layer surface due to surface imperfections, indicating that the quality of the seed layer surface plays an important role for the quality of the epitaxial Si film. We find a clear correlation between the structural crystal quality and defect-related radiative transitions at sub-bandgap wavelengths. Two dominant defect levels (~ 0.20 eV and ~ 0.29 eV below the conduction band edge) are observed and identified as impurity-related.en_HK
dc.languageengen_HK
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.subjectIntragrain defectsen_HK
dc.subjectPolycrystalline siliconen_HK
dc.subjectRenewable energyen_HK
dc.subjectThin film solar cellsen_HK
dc.titleIntragrain defects in polycrystalline silicon thin-film solar cells on glass by aluminum-induced crystallization and subsequent epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2008.01.020en_HK
dc.identifier.scopuseid_2-s2.0-44649141362en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44649141362&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume516en_HK
dc.identifier.issue18en_HK
dc.identifier.spage6409en_HK
dc.identifier.epage6412en_HK
dc.identifier.eissn1879-2731-
dc.identifier.isiWOS:000258037300077-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridRomero, MJ=7202431518en_HK
dc.identifier.scopusauthoridJones, KM=24321208800en_HK
dc.identifier.scopusauthoridNorman, AG=7401492211en_HK
dc.identifier.scopusauthoridAlJassim, MM=7005692042en_HK
dc.identifier.scopusauthoridInns, D=9334190000en_HK
dc.identifier.scopusauthoridAberle, AG=7006162095en_HK

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