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Article: Three-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots?

TitleThree-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots?
Authors
KeywordsAluminum Compounds
Gallium Nitride
High Resolution Transmission Electron Microscopy
Mass Transfer
Issue Date2008
PublisherWiley - V C H Verlag GmbH & Co KGaA
Citation
Advanced Materials, 2008, v. 20 n. 1, p. 134-137 How to Cite?
AbstractA new method to determine the exact three-dimensional (3D) geometry of aluminum nitride (AlN) nano-pits and their use as a template for epitaxially growing quantum dots (QDs) have been demonstrated. Z-contrast imaging that is relatively insensitive to focus conditions and specimen thickness than phase-contrast high resolution transmission electron microscopy was used to determine the 3D geometry of AlN pits. AlN could easily be distinguished from GaN and sapphire from the Z-contrast of a Z-contrast image, even without additional chemical analysis. It was observed that the pits impact the growth mechanism of the subsequently grown layer and its quality. It was also reported that the mass transport on the basis of AlN pits led to the bending of threading dislocations. These AlN nano-pits can be a promising template on which, III-nitride based quantum dots can be formed.
Persistent Identifierhttp://hdl.handle.net/10722/91404
ISSN
2015 Impact Factor: 18.96
2015 SCImago Journal Rankings: 9.021
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorCollazo, Ren_HK
dc.contributor.authorMita, Sen_HK
dc.contributor.authorSitar, Zen_HK
dc.contributor.authorDuscher, Gen_HK
dc.date.accessioned2010-09-17T10:18:44Z-
dc.date.available2010-09-17T10:18:44Z-
dc.date.issued2008en_HK
dc.identifier.citationAdvanced Materials, 2008, v. 20 n. 1, p. 134-137en_HK
dc.identifier.issn0935-9648en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91404-
dc.description.abstractA new method to determine the exact three-dimensional (3D) geometry of aluminum nitride (AlN) nano-pits and their use as a template for epitaxially growing quantum dots (QDs) have been demonstrated. Z-contrast imaging that is relatively insensitive to focus conditions and specimen thickness than phase-contrast high resolution transmission electron microscopy was used to determine the 3D geometry of AlN pits. AlN could easily be distinguished from GaN and sapphire from the Z-contrast of a Z-contrast image, even without additional chemical analysis. It was observed that the pits impact the growth mechanism of the subsequently grown layer and its quality. It was also reported that the mass transport on the basis of AlN pits led to the bending of threading dislocations. These AlN nano-pits can be a promising template on which, III-nitride based quantum dots can be formed.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaAen_HK
dc.relation.ispartofAdvanced Materialsen_HK
dc.subjectAluminum Compoundsen_HK
dc.subjectGallium Nitrideen_HK
dc.subjectHigh Resolution Transmission Electron Microscopyen_HK
dc.subjectMass Transferen_HK
dc.titleThree-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots?en_HK
dc.typeArticleen_HK
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.200701288en_HK
dc.identifier.scopuseid_2-s2.0-38549161496en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-38549161496&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue1en_HK
dc.identifier.spage134en_HK
dc.identifier.epage137en_HK
dc.identifier.isiWOS:000252866800023-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridCollazo, R=6701729383en_HK
dc.identifier.scopusauthoridMita, S=8535369100en_HK
dc.identifier.scopusauthoridSitar, Z=7004338257en_HK
dc.identifier.scopusauthoridDuscher, G=7006023463en_HK

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