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Article: The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence

TitleThe mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence
Authors
KeywordsElectron Diffraction
Heterojunctions
Nucleation
Semiconducting Aluminum Compounds
Transmission Electron Microscopy
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 20 How to Cite?
AbstractLateral-polarity heterostructures of GaN on c sapphire were prepared by deposition and patterning of a thin low-temperature AlN nucleation layer. Adjacent macroscopic domains were found to have opposite polarity; domains grown on the AlN nucleation layer were Ga polar while those grown on the nitrided sapphire were N polar, as confirmed by convergent-beam electron diffraction and Z -contrast images. We directly determined the atomic interface structure between the AlN and c sapphire with an aberration-corrected scanning transmission electron microscope at ∼1.0 Å resolution. This is the direct experimental evidence for the origin of the polarity control in III nitrides. This understanding is an important step toward manipulating polarity in these semiconductors. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/91401
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorCollazo, Ren_HK
dc.contributor.authorMita, Sen_HK
dc.contributor.authorSitar, Zen_HK
dc.contributor.authorDuscher, Gen_HK
dc.contributor.authorPennycook, SJen_HK
dc.date.accessioned2010-09-17T10:18:41Z-
dc.date.available2010-09-17T10:18:41Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 20en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91401-
dc.description.abstractLateral-polarity heterostructures of GaN on c sapphire were prepared by deposition and patterning of a thin low-temperature AlN nucleation layer. Adjacent macroscopic domains were found to have opposite polarity; domains grown on the AlN nucleation layer were Ga polar while those grown on the nitrided sapphire were N polar, as confirmed by convergent-beam electron diffraction and Z -contrast images. We directly determined the atomic interface structure between the AlN and c sapphire with an aberration-corrected scanning transmission electron microscope at ∼1.0 Å resolution. This is the direct experimental evidence for the origin of the polarity control in III nitrides. This understanding is an important step toward manipulating polarity in these semiconductors. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.subjectElectron Diffractionen_HK
dc.subjectHeterojunctionsen_HK
dc.subjectNucleationen_HK
dc.subjectSemiconducting Aluminum Compoundsen_HK
dc.subjectTransmission Electron Microscopyen_HK
dc.titleThe mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidenceen_HK
dc.typeArticleen_HK
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2815748en_HK
dc.identifier.scopuseid_2-s2.0-36248981988en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-36248981988&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue20en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000251003500099-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridCollazo, R=6701729383en_HK
dc.identifier.scopusauthoridMita, S=8535369100en_HK
dc.identifier.scopusauthoridSitar, Z=7004338257en_HK
dc.identifier.scopusauthoridDuscher, G=7006023463en_HK
dc.identifier.scopusauthoridPennycook, SJ=36039748000en_HK

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