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Article: Transition layers at the Si O 2 SiC interface

TitleTransition layers at the Si O 2 SiC interface
Authors
KeywordsSilicon Carbide
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 93 n. 2 How to Cite?
AbstractThe electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the Si O 2 SiC interface during processing. We analyzed the structure and chemistry of this interface for the thermally grown Si O 2 4H-SiC heterostructure using high-resolution transmission electron microscopy (TEM), Z -contrast scanning TEM, and spatially resolved electron energy-loss spectroscopy. The analyses revealed the presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiC surface was observed. These interfacial layers were attributed to the formation of a ternary Si-C-O phase during thermal oxidation. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/91398
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorZheleva, Ten_HK
dc.contributor.authorLelis, Aen_HK
dc.contributor.authorDuscher, Gen_HK
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorLevin, Ien_HK
dc.contributor.authorDas, Men_HK
dc.date.accessioned2010-09-17T10:18:38Z-
dc.date.available2010-09-17T10:18:38Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 93 n. 2en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91398-
dc.description.abstractThe electrical performance of SiC-based microelectronic devices is strongly affected by the densities of interfacial traps introduced by the chemical and structural changes at the Si O 2 SiC interface during processing. We analyzed the structure and chemistry of this interface for the thermally grown Si O 2 4H-SiC heterostructure using high-resolution transmission electron microscopy (TEM), Z -contrast scanning TEM, and spatially resolved electron energy-loss spectroscopy. The analyses revealed the presence of distinct layers, several nanometers thick, on each side of the interface; additionally, partial amorphization of the top SiC surface was observed. These interfacial layers were attributed to the formation of a ternary Si-C-O phase during thermal oxidation. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.subjectSilicon Carbideen_HK
dc.titleTransition layers at the Si O 2 SiC interfaceen_HK
dc.typeArticleen_HK
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2949081en_HK
dc.identifier.scopuseid_2-s2.0-47549117546en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-47549117546&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume93en_HK
dc.identifier.issue2en_HK
dc.identifier.isiWOS:000257796100057-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZheleva, T=7005345636en_HK
dc.identifier.scopusauthoridLelis, A=6603726958en_HK
dc.identifier.scopusauthoridDuscher, G=7006023463en_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridLevin, I=7202341735en_HK
dc.identifier.scopusauthoridDas, M=7402050794en_HK

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