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Article: Chemical composition changes across the interface of amorphous LaSc O3 on Si (001)

TitleChemical composition changes across the interface of amorphous LaSc O3 on Si (001)
Authors
KeywordsDensity (Specific Gravity)
Molecular Beams
Oxide Films
Permittivity
Stoichiometry
Thick Films
Transmission Electron Microscopy
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 15 How to Cite?
AbstractAn amorphous, high-dielectric-constant LaSc O3 film was deposited directly on Si (001) by molecular-beam deposition at ∼100 °C. Various transmission electron microscopy techniques were applied to study the interface at atomic resolution. We observed an ∼3.5-nm -thick interfacial layer that was not previously detected with other techniques. The interfacial layer contained defects and its density changes gradually. The interface was not only structurally sharp but also chemically sharp within the detection limit of the experimental methods. The chemical composition of the bulk oxide film was stoichiometric, but the interfacial layer was oxygen poor. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/91390
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorDuscher, Gen_HK
dc.date.accessioned2010-09-17T10:18:30Z-
dc.date.available2010-09-17T10:18:30Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 15en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91390-
dc.description.abstractAn amorphous, high-dielectric-constant LaSc O3 film was deposited directly on Si (001) by molecular-beam deposition at ∼100 °C. Various transmission electron microscopy techniques were applied to study the interface at atomic resolution. We observed an ∼3.5-nm -thick interfacial layer that was not previously detected with other techniques. The interfacial layer contained defects and its density changes gradually. The interface was not only structurally sharp but also chemically sharp within the detection limit of the experimental methods. The chemical composition of the bulk oxide film was stoichiometric, but the interfacial layer was oxygen poor. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.subjectDensity (Specific Gravity)en_HK
dc.subjectMolecular Beamsen_HK
dc.subjectOxide Filmsen_HK
dc.subjectPermittivityen_HK
dc.subjectStoichiometryen_HK
dc.subjectThick Filmsen_HK
dc.subjectTransmission Electron Microscopyen_HK
dc.titleChemical composition changes across the interface of amorphous LaSc O3 on Si (001)en_HK
dc.typeArticleen_HK
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2798246en_HK
dc.identifier.scopuseid_2-s2.0-35248812881en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-35248812881&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue15en_HK
dc.identifier.isiWOS:000250140700037-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridDuscher, G=7006023463en_HK

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