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Conference Paper: Solid-phase crystallization of evaporated silicon thin films on glass for photovoltaics: a combined SEM and TEM study

TitleSolid-phase crystallization of evaporated silicon thin films on glass for photovoltaics: a combined SEM and TEM study
Authors
KeywordsThin-film solar cells
Solid-phase crystallization
Polycrystalline silicon
Evaporation
Glass
Impurities
Intragrain defects
Photovoltaics
Issue Date2009
PublisherSPIE.
Citation
Proceedings of SPIE - The International Society For Optical Engineering, 2009, v. 7409, p. 740906 How to Cite?
AbstractThe material-quality limiting factors of evaporated solid-phase crystallized (SPC) poly-Si thin films fabricated on planar glass for photovoltaic applications are investigated by a study combining scanning electron microscopy and transmission electron microscopy. The grains in the investigated thin films are found to be randomly oriented, with an average grain size of ∼2.1 μm. In general, the grains are found to have a high defect density, although some grains are more defective than others. We also observe a high level of impurity incorporation, in particular, oxygen, into the film. The optical activity of the Si films is dominated by deep band tail states. We conclude that the high intragrain defect densities and the high impurity levels are two major limiting factors for obtaining high-quality evaporated SPC poly-Si thin films for photovoltaics. © 2009 SPIE.
Persistent Identifierhttp://hdl.handle.net/10722/91384
ISBN
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorRomero, MJen_HK
dc.contributor.authorJones, KMen_HK
dc.contributor.authorAl-Jassim, MMen_HK
dc.contributor.authorKunz, Oen_HK
dc.contributor.authorWong, Jen_HK
dc.contributor.authorAberle, AGen_HK
dc.date.accessioned2010-09-17T10:18:24Z-
dc.date.available2010-09-17T10:18:24Z-
dc.date.issued2009en_HK
dc.identifier.citationProceedings of SPIE - The International Society For Optical Engineering, 2009, v. 7409, p. 740906en_HK
dc.identifier.isbn9780819476999-
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/91384-
dc.description.abstractThe material-quality limiting factors of evaporated solid-phase crystallized (SPC) poly-Si thin films fabricated on planar glass for photovoltaic applications are investigated by a study combining scanning electron microscopy and transmission electron microscopy. The grains in the investigated thin films are found to be randomly oriented, with an average grain size of ∼2.1 μm. In general, the grains are found to have a high defect density, although some grains are more defective than others. We also observe a high level of impurity incorporation, in particular, oxygen, into the film. The optical activity of the Si films is dominated by deep band tail states. We conclude that the high intragrain defect densities and the high impurity levels are two major limiting factors for obtaining high-quality evaporated SPC poly-Si thin films for photovoltaics. © 2009 SPIE.en_HK
dc.languageengen_HK
dc.publisherSPIE.en_HK
dc.relation.ispartofThin Film Solar Technology : Proceedings of SPIE Volume 7409en_HK
dc.subjectThin-film solar cellsen_HK
dc.subjectSolid-phase crystallizationen_HK
dc.subjectPolycrystalline siliconen_HK
dc.subjectEvaporationen_HK
dc.subjectGlassen_HK
dc.subjectImpuritiesen_HK
dc.subjectIntragrain defectsen_HK
dc.subjectPhotovoltaicsen_HK
dc.titleSolid-phase crystallization of evaporated silicon thin films on glass for photovoltaics: a combined SEM and TEM studyen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLiu, F: fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1117/12.823622en_HK
dc.identifier.scopuseid_2-s2.0-70449642942en_HK
dc.identifier.hkuros194602-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70449642942&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume7409en_HK
dc.identifier.spage740906-
dc.identifier.epage740906-
dc.publisher.placeUnited Statesen_HK
dc.description.otherProceedings of SPIE - The International Society For Optical Engineering, 2009, v. 7409, p. 740906-
dc.identifier.scopusauthoridAberle, AG=7006162095en_HK
dc.identifier.scopusauthoridWong, J=7404431480en_HK
dc.identifier.scopusauthoridKunz, O=23990733000en_HK
dc.identifier.scopusauthoridAlJassim, MM=7005692042en_HK
dc.identifier.scopusauthoridJones, KM=24321208800en_HK
dc.identifier.scopusauthoridRomero, MJ=7202431518en_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK

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