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Article: Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution

TitleDirect observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution
Authors
KeywordsChemical Vapor Deposition
Corundum
Crystal Growth
Gallium Alloys
Gallium Nitride
Metallorganic Vapor Phase Epitaxy
Microscopic Examination
Milling (Machining)
Sapphire
Semiconducting Gallium
Issue Date2008
PublisherWiley - V C H Verlag GmbH & Co KGaA
Citation
Advanced Materials, 2008, v. 20 n. 11, p. 2162-2165 How to Cite?
AbstractThe direct observation of inversion domain boundaries (IDB) of GaN on c-Sapphire at sub-angstrom resolution was investigated. A ca. 1 μm thick GaN film was grown directly on c-sapphire at a temperature of 1030°C with a V/III ratio of around 100 by low-pressure metal-organic vapor phase epitaxy (MOVPE) process. N2 was used as dilution and carrier gas throughout the growth process. The transmission electron microscopy (TEM) specimens were prepared by the standard mechanical grinding and ion-milling method. The final step of specimen preparation was done at low voltage and high milling angle with a Fischione ion mill to minimize the artifacts introduced during specimen preparation. ADF-STEM images were taken with a VG Microscopes HB603U 300-kV STEM fitted with a Nion aberration corrector ay Oak Ridge National Laboratory, giving an expected probe size in the range of 0.8 Å. It was observed that the widely cited IDB theoretical structure can exist in reality.
Persistent Identifierhttp://hdl.handle.net/10722/91374
ISSN
2015 Impact Factor: 18.96
2015 SCImago Journal Rankings: 9.021
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorCollazo, Ren_HK
dc.contributor.authorMita, Sen_HK
dc.contributor.authorSitar, Zen_HK
dc.contributor.authorPennycook, SJen_HK
dc.contributor.authorDuscher, Gen_HK
dc.date.accessioned2010-09-17T10:18:12Z-
dc.date.available2010-09-17T10:18:12Z-
dc.date.issued2008en_HK
dc.identifier.citationAdvanced Materials, 2008, v. 20 n. 11, p. 2162-2165en_HK
dc.identifier.issn0935-9648en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91374-
dc.description.abstractThe direct observation of inversion domain boundaries (IDB) of GaN on c-Sapphire at sub-angstrom resolution was investigated. A ca. 1 μm thick GaN film was grown directly on c-sapphire at a temperature of 1030°C with a V/III ratio of around 100 by low-pressure metal-organic vapor phase epitaxy (MOVPE) process. N2 was used as dilution and carrier gas throughout the growth process. The transmission electron microscopy (TEM) specimens were prepared by the standard mechanical grinding and ion-milling method. The final step of specimen preparation was done at low voltage and high milling angle with a Fischione ion mill to minimize the artifacts introduced during specimen preparation. ADF-STEM images were taken with a VG Microscopes HB603U 300-kV STEM fitted with a Nion aberration corrector ay Oak Ridge National Laboratory, giving an expected probe size in the range of 0.8 Å. It was observed that the widely cited IDB theoretical structure can exist in reality.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaAen_HK
dc.relation.ispartofAdvanced Materialsen_HK
dc.subjectChemical Vapor Depositionen_HK
dc.subjectCorundumen_HK
dc.subjectCrystal Growthen_HK
dc.subjectGallium Alloysen_HK
dc.subjectGallium Nitrideen_HK
dc.subjectMetallorganic Vapor Phase Epitaxyen_HK
dc.subjectMicroscopic Examinationen_HK
dc.subjectMilling (Machining)en_HK
dc.subjectSapphireen_HK
dc.subjectSemiconducting Galliumen_HK
dc.titleDirect observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolutionen_HK
dc.typeArticleen_HK
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adma.200702522en_HK
dc.identifier.scopuseid_2-s2.0-55049120844en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-55049120844&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue11en_HK
dc.identifier.spage2162en_HK
dc.identifier.epage2165en_HK
dc.identifier.isiWOS:000257044600025-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridCollazo, R=6701729383en_HK
dc.identifier.scopusauthoridMita, S=8535369100en_HK
dc.identifier.scopusauthoridSitar, Z=7004338257en_HK
dc.identifier.scopusauthoridPennycook, SJ=36039748000en_HK
dc.identifier.scopusauthoridDuscher, G=7006023463en_HK

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