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Article: Thermal annealing effect on the interface structure of high- κ LaSc O3 on silicon

TitleThermal annealing effect on the interface structure of high- κ LaSc O3 on silicon
Authors
KeywordsAmorphous Films
Annealing
Gate Dielectrics
Polycrystalline Materials
Silicates
Thermal Effects
Transmission Electron Microscopy
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 15 How to Cite?
AbstractThe thermal stability of LaSc O3 on Si was examined by various transmission electron microscopy techniques. The film remained amorphous up to 700 °C and became polycrystalline at 800 °C. All samples showed an interfacial layer about 3.5 nm thick, except for the 1000 °C -annealed sample, which had a thicker interfacial layer containing a thin silicate layer close to the interface with the substrate. Although the chemical composition of the bulk film was stoichiometric, the interfacial layer was oxygen-rich after postannealing. The interfacial layer remained amorphous up to 1000 °C, indicating that this interfacial layer itself may be used as a gate dielectric. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/91370
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLiu, Fen_HK
dc.contributor.authorDuscher, Gen_HK
dc.date.accessioned2010-09-17T10:18:06Z-
dc.date.available2010-09-17T10:18:06Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 15en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91370-
dc.description.abstractThe thermal stability of LaSc O3 on Si was examined by various transmission electron microscopy techniques. The film remained amorphous up to 700 °C and became polycrystalline at 800 °C. All samples showed an interfacial layer about 3.5 nm thick, except for the 1000 °C -annealed sample, which had a thicker interfacial layer containing a thin silicate layer close to the interface with the substrate. Although the chemical composition of the bulk film was stoichiometric, the interfacial layer was oxygen-rich after postannealing. The interfacial layer remained amorphous up to 1000 °C, indicating that this interfacial layer itself may be used as a gate dielectric. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.subjectAmorphous Filmsen_HK
dc.subjectAnnealingen_HK
dc.subjectGate Dielectricsen_HK
dc.subjectPolycrystalline Materialsen_HK
dc.subjectSilicatesen_HK
dc.subjectThermal Effectsen_HK
dc.subjectTransmission Electron Microscopyen_HK
dc.titleThermal annealing effect on the interface structure of high- κ LaSc O3 on siliconen_HK
dc.typeArticleen_HK
dc.identifier.emailLiu, F:fordliu@hku.hken_HK
dc.identifier.authorityLiu, F=rp01358en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2799177en_HK
dc.identifier.scopuseid_2-s2.0-35248849252en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-35248849252&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume91en_HK
dc.identifier.issue15en_HK
dc.identifier.isiWOS:000250140700042-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, F=11038795100en_HK
dc.identifier.scopusauthoridDuscher, G=7006023463en_HK

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