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Article: Thermal annealing effect on the interface structure of high- κ LaSc O3 on silicon
Title | Thermal annealing effect on the interface structure of high- κ LaSc O3 on silicon |
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Authors | |
Keywords | Amorphous Films Annealing Gate Dielectrics Polycrystalline Materials Silicates Thermal Effects Transmission Electron Microscopy |
Issue Date | 2007 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2007, v. 91 n. 15, article no. 152906 How to Cite? |
Abstract | The thermal stability of LaSc O3 on Si was examined by various transmission electron microscopy techniques. The film remained amorphous up to 700 °C and became polycrystalline at 800 °C. All samples showed an interfacial layer about 3.5 nm thick, except for the 1000 °C -annealed sample, which had a thicker interfacial layer containing a thin silicate layer close to the interface with the substrate. Although the chemical composition of the bulk film was stoichiometric, the interfacial layer was oxygen-rich after postannealing. The interfacial layer remained amorphous up to 1000 °C, indicating that this interfacial layer itself may be used as a gate dielectric. © 2007 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/91370 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Liu, F | en_HK |
dc.contributor.author | Duscher, G | en_HK |
dc.date.accessioned | 2010-09-17T10:18:06Z | - |
dc.date.available | 2010-09-17T10:18:06Z | - |
dc.date.issued | 2007 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2007, v. 91 n. 15, article no. 152906 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/91370 | - |
dc.description.abstract | The thermal stability of LaSc O3 on Si was examined by various transmission electron microscopy techniques. The film remained amorphous up to 700 °C and became polycrystalline at 800 °C. All samples showed an interfacial layer about 3.5 nm thick, except for the 1000 °C -annealed sample, which had a thicker interfacial layer containing a thin silicate layer close to the interface with the substrate. Although the chemical composition of the bulk film was stoichiometric, the interfacial layer was oxygen-rich after postannealing. The interfacial layer remained amorphous up to 1000 °C, indicating that this interfacial layer itself may be used as a gate dielectric. © 2007 American Institute of Physics. | en_HK |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.subject | Amorphous Films | en_HK |
dc.subject | Annealing | en_HK |
dc.subject | Gate Dielectrics | en_HK |
dc.subject | Polycrystalline Materials | en_HK |
dc.subject | Silicates | en_HK |
dc.subject | Thermal Effects | en_HK |
dc.subject | Transmission Electron Microscopy | en_HK |
dc.title | Thermal annealing effect on the interface structure of high- κ LaSc O3 on silicon | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Liu, F:fordliu@hku.hk | en_HK |
dc.identifier.authority | Liu, F=rp01358 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.2799177 | en_HK |
dc.identifier.scopus | eid_2-s2.0-35248849252 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-35248849252&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 91 | en_HK |
dc.identifier.issue | 15 | en_HK |
dc.identifier.spage | article no. 152906 | - |
dc.identifier.epage | article no. 152906 | - |
dc.identifier.isi | WOS:000250140700042 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Liu, F=11038795100 | en_HK |
dc.identifier.scopusauthorid | Duscher, G=7006023463 | en_HK |
dc.identifier.issnl | 0003-6951 | - |