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Conference Paper: Fast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologies

TitleFast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologies
Authors
Issue Date2009
Citation
Ieee/Acm International Conference On Computer-Aided Design, Digest Of Technical Papers, Iccad, 2009, p. 658-665 How to Cite?
AbstractAccurate and fast estimation of VLSI interconnect thermal profiles has become critically important to estimate their impact on circuit/ system performance and reliability, which is necessary for reducing product development time and achieving first-pass silicon success. Present commercial thermal analysis tools are incapable of simulating complex structures, particularly in the 3-D domain and are also difficult to integrate with existing design tools. Existing analytical thermal models are not perfect either: they are either not accurate enough or oversimplified. This paper uses a methodology, which exploits existing electrical resistance solvers for thermal simulation, to allow fast acquisition of thermal profiles of complex interconnect structures with good accuracy and reasonable computation cost. Moreover, for the first time, an accurate closed-form thermal model is developed. The model allows for an equivalent medium with effective thermal conductivity (isotropic or anisotropic) to replace the detailed material information in non-critical regions so that complex interconnect structures can be simulated. Using these techniques, this paper demonstrates the simulation of a very complex interconnect structure (-9000 objects or 15 million meshed unknowns after first order isotropic equivalent medium replacement), which is a first time achievement in the area of interconnect thermal analysis. On the other hand, it is shown that an anisotropic equivalent medium is a much better approximation of real interconnect structures from the point of view of accuracy and computation. Copyright 2009 ACM.
Persistent Identifierhttp://hdl.handle.net/10722/91346
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorXu, Cen_HK
dc.contributor.authorJiang, Len_HK
dc.contributor.authorKolluri, SKen_HK
dc.contributor.authorRubin, BJen_HK
dc.contributor.authorDeutsch, Aen_HK
dc.contributor.authorSmith, Hen_HK
dc.contributor.authorBanerjee, Ken_HK
dc.date.accessioned2010-09-17T10:17:24Z-
dc.date.available2010-09-17T10:17:24Z-
dc.date.issued2009en_HK
dc.identifier.citationIeee/Acm International Conference On Computer-Aided Design, Digest Of Technical Papers, Iccad, 2009, p. 658-665en_HK
dc.identifier.issn1092-3152en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91346-
dc.description.abstractAccurate and fast estimation of VLSI interconnect thermal profiles has become critically important to estimate their impact on circuit/ system performance and reliability, which is necessary for reducing product development time and achieving first-pass silicon success. Present commercial thermal analysis tools are incapable of simulating complex structures, particularly in the 3-D domain and are also difficult to integrate with existing design tools. Existing analytical thermal models are not perfect either: they are either not accurate enough or oversimplified. This paper uses a methodology, which exploits existing electrical resistance solvers for thermal simulation, to allow fast acquisition of thermal profiles of complex interconnect structures with good accuracy and reasonable computation cost. Moreover, for the first time, an accurate closed-form thermal model is developed. The model allows for an equivalent medium with effective thermal conductivity (isotropic or anisotropic) to replace the detailed material information in non-critical regions so that complex interconnect structures can be simulated. Using these techniques, this paper demonstrates the simulation of a very complex interconnect structure (-9000 objects or 15 million meshed unknowns after first order isotropic equivalent medium replacement), which is a first time achievement in the area of interconnect thermal analysis. On the other hand, it is shown that an anisotropic equivalent medium is a much better approximation of real interconnect structures from the point of view of accuracy and computation. Copyright 2009 ACM.en_HK
dc.languageengen_HK
dc.relation.ispartofIEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCADen_HK
dc.titleFast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologiesen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailJiang, L:ljiang@eee.hku.hken_HK
dc.identifier.authorityJiang, L=rp01338en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-76349083358en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-76349083358&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage658en_HK
dc.identifier.epage665en_HK
dc.identifier.scopusauthoridXu, C=31767769100en_HK
dc.identifier.scopusauthoridJiang, L=36077777200en_HK
dc.identifier.scopusauthoridKolluri, SK=24724435100en_HK
dc.identifier.scopusauthoridRubin, BJ=7201761344en_HK
dc.identifier.scopusauthoridDeutsch, A=7102025083en_HK
dc.identifier.scopusauthoridSmith, H=7406226774en_HK
dc.identifier.scopusauthoridBanerjee, K=7102724770en_HK

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