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Conference Paper: Electrical-thermal co-analysis for power delivery networks in 3D system integration

TitleElectrical-thermal co-analysis for power delivery networks in 3D system integration
Authors
Keywords3D integration
Electrical-thermal co-anlysis
IR drop
Joule heating
Power delivery network (PDN)
Temperature effect
Through-silicon via (TSV)
Issue Date2009
Citation
2009 Ieee International Conference On 3D System Integration, 3Dic 2009, 2009 How to Cite?
AbstractIn this paper, an electrical-thermal co-analysis method for power delivery networks in 3D system integration is proposed. For electrical analysis, temperature-dependent electrical resistivity of conductors is taken into account. For thermal analysis, Joule heating effect due to the current flowing through conductors is considered. The proposed co-analysis method is carried out using Rgen and ChipJoule of IBM EIP Tool Suite. An example of 3D integration system including stacked chips, power delivery network, glass-ceramic substrate, through-silicon vias, controlled collapse chip connections (C4s), underfill material, and TIM is analyzed using the proposed method. The simulation results show that the temperature effect on IR drop can not be neglected. The error of not considering thermal effect on IR drop is about 20% in the example. © 2009 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/91320
References

 

DC FieldValueLanguage
dc.contributor.authorXie, Jen_HK
dc.contributor.authorChung, Den_HK
dc.contributor.authorSwaminathan, Men_HK
dc.contributor.authorMcallister, Men_HK
dc.contributor.authorDeutsch, Aen_HK
dc.contributor.authorJiang, Len_HK
dc.contributor.authorRubin, BJen_HK
dc.date.accessioned2010-09-17T10:16:59Z-
dc.date.available2010-09-17T10:16:59Z-
dc.date.issued2009en_HK
dc.identifier.citation2009 Ieee International Conference On 3D System Integration, 3Dic 2009, 2009en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91320-
dc.description.abstractIn this paper, an electrical-thermal co-analysis method for power delivery networks in 3D system integration is proposed. For electrical analysis, temperature-dependent electrical resistivity of conductors is taken into account. For thermal analysis, Joule heating effect due to the current flowing through conductors is considered. The proposed co-analysis method is carried out using Rgen and ChipJoule of IBM EIP Tool Suite. An example of 3D integration system including stacked chips, power delivery network, glass-ceramic substrate, through-silicon vias, controlled collapse chip connections (C4s), underfill material, and TIM is analyzed using the proposed method. The simulation results show that the temperature effect on IR drop can not be neglected. The error of not considering thermal effect on IR drop is about 20% in the example. © 2009 IEEE.en_HK
dc.languageengen_HK
dc.relation.ispartof2009 IEEE International Conference on 3D System Integration, 3DIC 2009en_HK
dc.subject3D integrationen_HK
dc.subjectElectrical-thermal co-anlysisen_HK
dc.subjectIR dropen_HK
dc.subjectJoule heatingen_HK
dc.subjectPower delivery network (PDN)en_HK
dc.subjectTemperature effecten_HK
dc.subjectThrough-silicon via (TSV)en_HK
dc.titleElectrical-thermal co-analysis for power delivery networks in 3D system integrationen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailJiang, L:ljiang@eee.hku.hken_HK
dc.identifier.authorityJiang, L=rp01338en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/3DIC.2009.5306525en_HK
dc.identifier.scopuseid_2-s2.0-70549098155en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-70549098155&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.scopusauthoridXie, J=7402994229en_HK
dc.identifier.scopusauthoridChung, D=9533916800en_HK
dc.identifier.scopusauthoridSwaminathan, M=7103353366en_HK
dc.identifier.scopusauthoridMcallister, M=7102448103en_HK
dc.identifier.scopusauthoridDeutsch, A=7102025083en_HK
dc.identifier.scopusauthoridJiang, L=36077777200en_HK
dc.identifier.scopusauthoridRubin, BJ=7201761344en_HK

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