File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Two-photon photovoltaic effect in silicon

TitleTwo-photon photovoltaic effect in silicon
Authors
KeywordsEnergy harvesting
Kerr effect
Nonlinear optics
Optical amplifiers
Photovoltaic effect
Raman effect
Silicon photonics
Two-photon absorption
Issue Date2007
PublisherIEEE
Citation
Ieee Journal Of Quantum Electronics, 2007, v. 43 n. 12, p. 1211-1217 How to Cite?
AbstractOptical amplification, wavelength conversion, and a myriad of other functions that were once considered to be beyond silicon's reach have been made possible by the material's nonlinear optical properties. The common feature of such devices is the high optical intensity that is required to induce the nonlinear optical interactions. Concurrent with the useful nonlinearities (Raman and Kerr) are two-photon absorption and free carrier scattering, which are two related and harmful phenomena that render silicon lossy at high intensities. This paper explores the use of the two-photon photovoltaic effect as a means to counter these phenomena in an energy-efficient manner. The effect reduces losses due to free carrier scattering and serendipitously scavenges the optical energy lost to two-photon absorption. Analytical and numerical modeling of the two-photon photovoltaic effect in silicon devices is presented. The model is validated through comparison with experimental results and is used to establish the limits of this approach for creating energy-efficient silicon photonic devices. © 2007 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/91319
ISSN
2015 Impact Factor: 1.843
2015 SCImago Journal Rankings: 1.128
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorFathpour, Sen_HK
dc.contributor.authorTsia, KKen_HK
dc.contributor.authorJalali, Ben_HK
dc.date.accessioned2010-09-17T10:16:58Z-
dc.date.available2010-09-17T10:16:58Z-
dc.date.issued2007en_HK
dc.identifier.citationIeee Journal Of Quantum Electronics, 2007, v. 43 n. 12, p. 1211-1217en_HK
dc.identifier.issn0018-9197en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91319-
dc.description.abstractOptical amplification, wavelength conversion, and a myriad of other functions that were once considered to be beyond silicon's reach have been made possible by the material's nonlinear optical properties. The common feature of such devices is the high optical intensity that is required to induce the nonlinear optical interactions. Concurrent with the useful nonlinearities (Raman and Kerr) are two-photon absorption and free carrier scattering, which are two related and harmful phenomena that render silicon lossy at high intensities. This paper explores the use of the two-photon photovoltaic effect as a means to counter these phenomena in an energy-efficient manner. The effect reduces losses due to free carrier scattering and serendipitously scavenges the optical energy lost to two-photon absorption. Analytical and numerical modeling of the two-photon photovoltaic effect in silicon devices is presented. The model is validated through comparison with experimental results and is used to establish the limits of this approach for creating energy-efficient silicon photonic devices. © 2007 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEEen_HK
dc.relation.ispartofIEEE Journal of Quantum Electronicsen_HK
dc.subjectEnergy harvestingen_HK
dc.subjectKerr effecten_HK
dc.subjectNonlinear opticsen_HK
dc.subjectOptical amplifiersen_HK
dc.subjectPhotovoltaic effecten_HK
dc.subjectRaman effecten_HK
dc.subjectSilicon photonicsen_HK
dc.subjectTwo-photon absorptionen_HK
dc.titleTwo-photon photovoltaic effect in siliconen_HK
dc.typeArticleen_HK
dc.identifier.emailTsia, KK:tsia@hku.hken_HK
dc.identifier.authorityTsia, KK=rp01389en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/JQE.2007.907545en_HK
dc.identifier.scopuseid_2-s2.0-61549088877en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-61549088877&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume43en_HK
dc.identifier.issue12en_HK
dc.identifier.spage1211en_HK
dc.identifier.epage1217en_HK
dc.identifier.isiWOS:000251376700031-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridFathpour, S=9738012600en_HK
dc.identifier.scopusauthoridTsia, KK=6506659574en_HK
dc.identifier.scopusauthoridJalali, B=7004889917en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats