File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Periodically poled silicon

TitlePeriodically poled silicon
Authors
KeywordsInternal stresses
Nonlinear equations
Optical frequency conversion
Optical phase matching
Optical waveguides and silicon
Issue Date2010
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings Of Spie - The International Society For Optical Engineering, 2010, v. 7582 How to Cite?
AbstractBulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy. © 2010 Copyright SPIE - The International Society for Optical Engineering.
Persistent Identifierhttp://hdl.handle.net/10722/91308
ISSN
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorHon, NKen_HK
dc.contributor.authorTsia, KKen_HK
dc.contributor.authorSolli, DRen_HK
dc.contributor.authorKhurgin, JBen_HK
dc.contributor.authorJalali, Ben_HK
dc.date.accessioned2010-09-17T10:16:47Z-
dc.date.available2010-09-17T10:16:47Z-
dc.date.issued2010en_HK
dc.identifier.citationProceedings Of Spie - The International Society For Optical Engineering, 2010, v. 7582en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/91308-
dc.description.abstractBulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy. © 2010 Copyright SPIE - The International Society for Optical Engineering.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.subjectInternal stressesen_HK
dc.subjectNonlinear equationsen_HK
dc.subjectOptical frequency conversionen_HK
dc.subjectOptical phase matchingen_HK
dc.subjectOptical waveguides and siliconen_HK
dc.titlePeriodically poled siliconen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailTsia, KK:tsia@hku.hken_HK
dc.identifier.authorityTsia, KK=rp01389en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.842676en_HK
dc.identifier.scopuseid_2-s2.0-77951704407en_HK
dc.identifier.hkuros176888-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77951704407&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume7582en_HK
dc.identifier.isiWOS:000284935000031-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHon, NK=16312604600en_HK
dc.identifier.scopusauthoridTsia, KK=6506659574en_HK
dc.identifier.scopusauthoridSolli, DR=6701800544en_HK
dc.identifier.scopusauthoridKhurgin, JB=7006097384en_HK
dc.identifier.scopusauthoridJalali, B=7004889917en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats