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Article: Ferroelectric BaTi O3 thin films on Ni metal tapes using NiO as buffer layer

TitleFerroelectric BaTi O3 thin films on Ni metal tapes using NiO as buffer layer
Authors
KeywordsBarium Titanate
Dielectric Losses
Interdiffusion (Solids)
Nickel
Permittivity
Pulsed Laser Deposition
Transmission Electron Microscopy
X Ray Diffraction Analysis
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 90 n. 20 How to Cite?
AbstractFerroelectric BaTi O3 (BTO) thin films were deposited on NiO buffered polycrystalline Ni tapes by pulsed laser deposition. Microstructural studies by x-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no interdiffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. These excellent properties indicate that the as-fabricated BTO films are promising for the development of the structural health monitoring systems. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/91075
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYuan, Zen_HK
dc.contributor.authorLiu, Jen_HK
dc.contributor.authorWeaver, Jen_HK
dc.contributor.authorChen, CLen_HK
dc.contributor.authorJiang, JCen_HK
dc.contributor.authorLin, Ben_HK
dc.contributor.authorGiurgiutiu, Ven_HK
dc.contributor.authorBhalla, Aen_HK
dc.contributor.authorGuo, RYen_HK
dc.date.accessioned2010-09-17T10:12:39Z-
dc.date.available2010-09-17T10:12:39Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 90 n. 20en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/91075-
dc.description.abstractFerroelectric BaTi O3 (BTO) thin films were deposited on NiO buffered polycrystalline Ni tapes by pulsed laser deposition. Microstructural studies by x-ray diffractometer and transmission electron microscopy reveal that the as-grown BTO films have the nanopillar structures with an average size of approximately 80 nm in diameter and the good interface structures with no interdiffusion or reaction. The dielectric and ferroelectric property measurements exhibit that the BTO films have a relatively large dielectric constant, a small dielectric loss, and an extremely large piezoelectric response with a symmetric hysteresis loop. These excellent properties indicate that the as-fabricated BTO films are promising for the development of the structural health monitoring systems. © 2007 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.subjectBarium Titanateen_HK
dc.subjectDielectric Lossesen_HK
dc.subjectInterdiffusion (Solids)en_HK
dc.subjectNickelen_HK
dc.subjectPermittivityen_HK
dc.subjectPulsed Laser Depositionen_HK
dc.subjectTransmission Electron Microscopyen_HK
dc.subjectX Ray Diffraction Analysisen_HK
dc.titleFerroelectric BaTi O3 thin films on Ni metal tapes using NiO as buffer layeren_HK
dc.typeArticleen_HK
dc.identifier.emailLin, B:blin@hku.hken_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.2739082en_HK
dc.identifier.scopuseid_2-s2.0-34249095529en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-34249095529&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume90en_HK
dc.identifier.issue20en_HK
dc.identifier.isiWOS:000246623500058-

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