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Article: Dielectric behaviours of multi-doped BaTiO3/epoxy composites
Title | Dielectric behaviours of multi-doped BaTiO3/epoxy composites |
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Authors | |
Keywords | Batio3 Composites Dielectric Properties Epoxy Materials |
Issue Date | 2001 |
Publisher | Elsevier Ltd. The Journal's web site is located at http://www.elsevier.com/locate/jeurceramsoc |
Citation | Journal of the European Ceramic Society, 2001, v. 21 n. 9, p. 1171-1177 How to Cite? |
Abstract | Multi-doped Ba TiO3/epoxy composites with the different types of treated ceramic powders are under investigation. The ceramic/epoxy composite with the 900°C treated ceramic powder has the highest dielectric constant, while lower values for those with powders treated at higher temperatures. Longer grinding of 20 h can have different heat-treated composites with similar dielectric constants. Dielectric properties of these composites were measured as functions of temperature and frequency. The increase of dielectric loss at frequencies above 1 MHz is due to the mechanism of domain-wall motion. The composite with semi-conducting fillers can have a limited increase in dielectric constant, but a large increase in dielectric loss. To have the best dielectric properties of the multi-doped BaTiO3/epoxy composite thick films for the printed wiring boards, the ceramic ratio need to be maximized without losing the board flexibility. A proper powder treatment is required to maximize the powder loading and performance. © 2001 Elsevier Science Ltd. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/90943 |
ISSN | 2023 Impact Factor: 5.8 2023 SCImago Journal Rankings: 1.198 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Kuo, D-H | en_HK |
dc.contributor.author | Chang, C-C | en_HK |
dc.contributor.author | Su, T-Y | en_HK |
dc.contributor.author | Wang, W-K | en_HK |
dc.contributor.author | Lin, B-Y | en_HK |
dc.date.accessioned | 2010-09-17T10:10:42Z | - |
dc.date.available | 2010-09-17T10:10:42Z | - |
dc.date.issued | 2001 | en_HK |
dc.identifier.citation | Journal of the European Ceramic Society, 2001, v. 21 n. 9, p. 1171-1177 | en_HK |
dc.identifier.issn | 0955-2219 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/90943 | - |
dc.description.abstract | Multi-doped Ba TiO3/epoxy composites with the different types of treated ceramic powders are under investigation. The ceramic/epoxy composite with the 900°C treated ceramic powder has the highest dielectric constant, while lower values for those with powders treated at higher temperatures. Longer grinding of 20 h can have different heat-treated composites with similar dielectric constants. Dielectric properties of these composites were measured as functions of temperature and frequency. The increase of dielectric loss at frequencies above 1 MHz is due to the mechanism of domain-wall motion. The composite with semi-conducting fillers can have a limited increase in dielectric constant, but a large increase in dielectric loss. To have the best dielectric properties of the multi-doped BaTiO3/epoxy composite thick films for the printed wiring boards, the ceramic ratio need to be maximized without losing the board flexibility. A proper powder treatment is required to maximize the powder loading and performance. © 2001 Elsevier Science Ltd. All rights reserved. | en_HK |
dc.language | eng | en_HK |
dc.publisher | Elsevier Ltd. The Journal's web site is located at http://www.elsevier.com/locate/jeurceramsoc | en_HK |
dc.relation.ispartof | Journal of the European Ceramic Society | en_HK |
dc.subject | Batio3 | en_HK |
dc.subject | Composites | en_HK |
dc.subject | Dielectric Properties | en_HK |
dc.subject | Epoxy Materials | en_HK |
dc.title | Dielectric behaviours of multi-doped BaTiO3/epoxy composites | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Lin, B:blin@hku.hk | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/S0955-2219(00)00327-7 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0035452796 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0035452796&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 21 | en_HK |
dc.identifier.issue | 9 | en_HK |
dc.identifier.spage | 1171 | en_HK |
dc.identifier.epage | 1177 | en_HK |
dc.identifier.isi | WOS:000169252600006 | - |
dc.identifier.issnl | 0955-2219 | - |