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Article: Design realization and characterization of a position sensitive detector for fast optical measurement

TitleDesign realization and characterization of a position sensitive detector for fast optical measurement
Authors
KeywordsArray
Crystal Silicon
P-N Junction
Position Sensitive
Wavefront Sensor
Issue Date2006
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/oe
Citation
Optical Engineering, 2006, v. 45 n. 1 How to Cite?
AbstractThe fabrication and testing results of a 65-pin ceramic packaged 4 × 4 arrayed position sensitive detector are presented. The detector, consisting of 16 tetra-lateral sensitive areas, is a p-n-n+ configuration made on 3-in. <111> n-type high resistance crystal silicon substrates. A 100-nm antireflection SiO2 thin film is formed on the surface, along with a multilayer cover glass with transmissivity >98% from 400 to 950 nm. Primary tests of the device show that it has a low dark current, high spectral sensitivity, very fast response speed, and very good linearity. The dark current of an element unit is less than 20 nA, which is the allowable maximum dark current. The peak spectral sensitivity of the sensor is over 505 mA/W at 800-nm wavelength. Its response time is 8 ns at 45-V reverse bias and the nonlinearity of the total sensitive area is less than 1%. © 2006 Society of Photo-Optical Instrumentation Engineers.
Persistent Identifierhttp://hdl.handle.net/10722/90932
ISSN
2015 Impact Factor: 0.984
2015 SCImago Journal Rankings: 0.485
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorQi, Xen_HK
dc.contributor.authorLin, Ben_HK
dc.contributor.authorChen, Den_HK
dc.contributor.authorCao, Xen_HK
dc.contributor.authorChen, Yen_HK
dc.date.accessioned2010-09-17T10:10:32Z-
dc.date.available2010-09-17T10:10:32Z-
dc.date.issued2006en_HK
dc.identifier.citationOptical Engineering, 2006, v. 45 n. 1en_HK
dc.identifier.issn0091-3286en_HK
dc.identifier.urihttp://hdl.handle.net/10722/90932-
dc.description.abstractThe fabrication and testing results of a 65-pin ceramic packaged 4 × 4 arrayed position sensitive detector are presented. The detector, consisting of 16 tetra-lateral sensitive areas, is a p-n-n+ configuration made on 3-in. <111> n-type high resistance crystal silicon substrates. A 100-nm antireflection SiO2 thin film is formed on the surface, along with a multilayer cover glass with transmissivity >98% from 400 to 950 nm. Primary tests of the device show that it has a low dark current, high spectral sensitivity, very fast response speed, and very good linearity. The dark current of an element unit is less than 20 nA, which is the allowable maximum dark current. The peak spectral sensitivity of the sensor is over 505 mA/W at 800-nm wavelength. Its response time is 8 ns at 45-V reverse bias and the nonlinearity of the total sensitive area is less than 1%. © 2006 Society of Photo-Optical Instrumentation Engineers.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/oeen_HK
dc.relation.ispartofOptical Engineeringen_HK
dc.subjectArrayen_HK
dc.subjectCrystal Siliconen_HK
dc.subjectP-N Junctionen_HK
dc.subjectPosition Sensitiveen_HK
dc.subjectWavefront Sensoren_HK
dc.titleDesign realization and characterization of a position sensitive detector for fast optical measurementen_HK
dc.typeArticleen_HK
dc.identifier.emailLin, B:blin@hku.hken_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/1.2151807en_HK
dc.identifier.scopuseid_2-s2.0-33748591820en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33748591820&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume45en_HK
dc.identifier.issue1en_HK
dc.identifier.eissn1560-2303-
dc.identifier.isiWOS:000235481400012-

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