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Article: Modeling of PSD based on Schottky-barrier junction

TitleModeling of PSD based on Schottky-barrier junction
Authors
KeywordsP-N Junction
Psd
Responsibility
Schottky Structure
Issue Date2005
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
Proceedings of SPIE - The International Society for Optical Engineering, 2005, v. 5644 PART 1, p. 15-20 How to Cite?
AbstractPosition Sensitive Detector (PSD) is a position sensor utilizing the lateral photoelectric effect produced by the non-uniform illumination of a rectifying semiconductor junction. Recently, mostly researches of PSD focus on the linear requirements or response characters of PSD with p-n junction. However, this paper concentrates on a novel characteristics of PSD based on the Schottky junction. This junction has many distinguished traits comparing with the p-n junction. Since the intrinsic excellent characteristics, the Schottky PSD has faster response and higher sensitivity to the incident radiation, lager current density, low current leakage and so on. This paper provides an analysis and model of the Schottky-barrier PSD lateral potential creation, response characteristic and position linearity condition with the Schottky junction, which is deduced by the charge conversation law and the model of carriers transport. All the study work is the theoretical basis for design of this junction with better performance.
Persistent Identifierhttp://hdl.handle.net/10722/90909
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorTan, Cen_HK
dc.contributor.authorLin, Ben_HK
dc.contributor.authorChen, Den_HK
dc.contributor.authorChen, Yen_HK
dc.date.accessioned2010-09-17T10:10:12Z-
dc.date.available2010-09-17T10:10:12Z-
dc.date.issued2005en_HK
dc.identifier.citationProceedings of SPIE - The International Society for Optical Engineering, 2005, v. 5644 PART 1, p. 15-20en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/90909-
dc.description.abstractPosition Sensitive Detector (PSD) is a position sensor utilizing the lateral photoelectric effect produced by the non-uniform illumination of a rectifying semiconductor junction. Recently, mostly researches of PSD focus on the linear requirements or response characters of PSD with p-n junction. However, this paper concentrates on a novel characteristics of PSD based on the Schottky junction. This junction has many distinguished traits comparing with the p-n junction. Since the intrinsic excellent characteristics, the Schottky PSD has faster response and higher sensitivity to the incident radiation, lager current density, low current leakage and so on. This paper provides an analysis and model of the Schottky-barrier PSD lateral potential creation, response characteristic and position linearity condition with the Schottky junction, which is deduced by the charge conversation law and the model of carriers transport. All the study work is the theoretical basis for design of this junction with better performance.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.subjectP-N Junctionen_HK
dc.subjectPsden_HK
dc.subjectResponsibilityen_HK
dc.subjectSchottky Structureen_HK
dc.titleModeling of PSD based on Schottky-barrier junctionen_HK
dc.typeArticleen_HK
dc.identifier.emailLin, B:blin@hku.hken_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.576667en_HK
dc.identifier.scopuseid_2-s2.0-20044388182en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-20044388182&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume5644en_HK
dc.identifier.issuePART 1en_HK
dc.identifier.spage15en_HK
dc.identifier.epage20en_HK

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