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Article: Fabrication of a new two dimensional near infrared pincushion silicon based position sensitive detector

TitleFabrication of a new two dimensional near infrared pincushion silicon based position sensitive detector
Authors
KeywordsNear Infrared
Pn Junction
Position Sensitive Detector (Psd)
Spectral Response
Issue Date2006
Citation
Guangdianzi Jiguang/Journal of Optoelectronics Laser, 2006, v. 17 n. 10, p. 1208-1211+1232 How to Cite?
AbstractA new photoelectric model of silicon based position sensitive detector (PSD) is built and the formulas of the photocurrent and spectral response are gotten with it. The effect of every layer thickness and SiO2 thickness on the spectral response is analysed and calculated. The spectral response of PSD is affected by the thickness of p layer mainly at short wavelength and by the thickness of the depletion layer mainly at long wavelength. With the results, a new silicon based near infrared 2-D pincushion PSD is designed and fabricated. The experimental results show that the peak spectral sensitivity of our device is 0.626 A/W at 920 nm wavelength.
Persistent Identifierhttp://hdl.handle.net/10722/90863
ISSN
2015 SCImago Journal Rankings: 0.331
References

 

DC FieldValueLanguage
dc.contributor.authorQi, X-Jen_HK
dc.contributor.authorLin, Ben_HK
dc.contributor.authorChen, Z-Pen_HK
dc.contributor.authorCao, X-Qen_HK
dc.contributor.authorChen, Y-Qen_HK
dc.date.accessioned2010-09-17T10:09:30Z-
dc.date.available2010-09-17T10:09:30Z-
dc.date.issued2006en_HK
dc.identifier.citationGuangdianzi Jiguang/Journal of Optoelectronics Laser, 2006, v. 17 n. 10, p. 1208-1211+1232en_HK
dc.identifier.issn1005-0086en_HK
dc.identifier.urihttp://hdl.handle.net/10722/90863-
dc.description.abstractA new photoelectric model of silicon based position sensitive detector (PSD) is built and the formulas of the photocurrent and spectral response are gotten with it. The effect of every layer thickness and SiO2 thickness on the spectral response is analysed and calculated. The spectral response of PSD is affected by the thickness of p layer mainly at short wavelength and by the thickness of the depletion layer mainly at long wavelength. With the results, a new silicon based near infrared 2-D pincushion PSD is designed and fabricated. The experimental results show that the peak spectral sensitivity of our device is 0.626 A/W at 920 nm wavelength.en_HK
dc.languageengen_HK
dc.relation.ispartofGuangdianzi Jiguang/Journal of Optoelectronics Laseren_HK
dc.subjectNear Infrareden_HK
dc.subjectPn Junctionen_HK
dc.subjectPosition Sensitive Detector (Psd)en_HK
dc.subjectSpectral Responseen_HK
dc.titleFabrication of a new two dimensional near infrared pincushion silicon based position sensitive detectoren_HK
dc.typeArticleen_HK
dc.identifier.emailLin, B:blin@hku.hken_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-33845535349en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33845535349&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume17en_HK
dc.identifier.issue10en_HK
dc.identifier.spage1208en_HK
dc.identifier.epage1211+1232en_HK

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