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Article: Nitric oxide inhibits delayed rectifier potassium currents in cultured hippocampal neurons via S-nitrosylation
Title | Nitric oxide inhibits delayed rectifier potassium currents in cultured hippocampal neurons via S-nitrosylation |
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Authors | |
Keywords | Hippocampal neuron NO Patch clamp Potassium channels S-nitrosylation |
Issue Date | 2006 |
Citation | Progress In Biochemistry And Biophysics, 2006, v. 33 n. 3, p. 241-246 How to Cite? |
Abstract | The modulating action and mechanism of endogenous nitric oxide (NO) on the delayed rectifier potassium currents in cultured hippocampal neurons were examined using whole-cell patch clamp techniques. L-arginine (L-Arg, 2 mmol/L), a substrate of NO synthases, significantly suppressed the delayed rectifier K+ currents in hippocampal neurons, while its isomer D-arginine (D-Arg, 2 mmol/L) exerted no effect. Moreover, pretreatment with NO synthase inhibitor L-NAME (0.5 mmol/L) completely blocked the suppressing effect by L-Arg, indicating that L-Arg exerted its modulation by producing NO but not by itself. No effect was found on the L-Arg-induced inhibition by 10 min pretreatment of 10 μmol/L ODQ (a specific inhibitor of guanylate cyclase). In contrast, thiol-alkylating agent N-ethylmaleimide (1 mmol/L) completely precluded L-Arg-induced inhibition on the whole K+ currents. The results indicate that endogenous NO modulates the delayed rectifier K + currents in cultured hippocampal neurons mostly through S-nitrosylation. |
Persistent Identifier | http://hdl.handle.net/10722/81368 |
ISSN | 2023 Impact Factor: 0.2 2023 SCImago Journal Rankings: 0.125 |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Wang, CF | en_HK |
dc.contributor.author | Chen, M | en_HK |
dc.contributor.author | Fung, ML | en_HK |
dc.contributor.author | Gao, TM | en_HK |
dc.date.accessioned | 2010-09-06T08:16:50Z | - |
dc.date.available | 2010-09-06T08:16:50Z | - |
dc.date.issued | 2006 | en_HK |
dc.identifier.citation | Progress In Biochemistry And Biophysics, 2006, v. 33 n. 3, p. 241-246 | en_HK |
dc.identifier.issn | 1000-3282 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/81368 | - |
dc.description.abstract | The modulating action and mechanism of endogenous nitric oxide (NO) on the delayed rectifier potassium currents in cultured hippocampal neurons were examined using whole-cell patch clamp techniques. L-arginine (L-Arg, 2 mmol/L), a substrate of NO synthases, significantly suppressed the delayed rectifier K+ currents in hippocampal neurons, while its isomer D-arginine (D-Arg, 2 mmol/L) exerted no effect. Moreover, pretreatment with NO synthase inhibitor L-NAME (0.5 mmol/L) completely blocked the suppressing effect by L-Arg, indicating that L-Arg exerted its modulation by producing NO but not by itself. No effect was found on the L-Arg-induced inhibition by 10 min pretreatment of 10 μmol/L ODQ (a specific inhibitor of guanylate cyclase). In contrast, thiol-alkylating agent N-ethylmaleimide (1 mmol/L) completely precluded L-Arg-induced inhibition on the whole K+ currents. The results indicate that endogenous NO modulates the delayed rectifier K + currents in cultured hippocampal neurons mostly through S-nitrosylation. | en_HK |
dc.language | eng | en_HK |
dc.relation.ispartof | Progress in Biochemistry and Biophysics | en_HK |
dc.subject | Hippocampal neuron | en_HK |
dc.subject | NO | en_HK |
dc.subject | Patch clamp | en_HK |
dc.subject | Potassium channels | en_HK |
dc.subject | S-nitrosylation | en_HK |
dc.title | Nitric oxide inhibits delayed rectifier potassium currents in cultured hippocampal neurons via S-nitrosylation | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Fung, ML: fungml@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, ML=rp00433 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.scopus | eid_2-s2.0-33744950102 | en_HK |
dc.identifier.hkuros | 122292 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-33744950102&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 33 | en_HK |
dc.identifier.issue | 3 | en_HK |
dc.identifier.spage | 241 | en_HK |
dc.identifier.epage | 246 | en_HK |
dc.publisher.place | China | en_HK |
dc.identifier.scopusauthorid | Wang, CF=14009100600 | en_HK |
dc.identifier.scopusauthorid | Chen, M=35285618500 | en_HK |
dc.identifier.scopusauthorid | Fung, ML=7101955092 | en_HK |
dc.identifier.scopusauthorid | Gao, TM=7101845480 | en_HK |
dc.identifier.issnl | 1000-3282 | - |