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Article: Electronic structure near an impurity and terrace on the surface of a three-dimensional topological insulator

TitleElectronic structure near an impurity and terrace on the surface of a three-dimensional topological insulator
Authors
KeywordsPhysics
Issue Date2010
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2010, v. 81 n. 3 How to Cite?
AbstractMotivated by recent scanning tunneling microscopy experiments on surfaces of Bi1-x Sb x′ and Bi2 Te3, we theoretically study the electronic structure of a three-dimensional (3D) topological insulator in the presence of a local impurity or a domain wall on its surface using a 3D lattice model. While the local density of states (LDOS) oscillates significantly in space at energies above the bulk gap, the oscillation due to the in-gap surface Dirac fermions is very weak. The extracted modulation wave number as a function of energy satisfies the Dirac dispersion for in-gap energies and follows the border of the bulk continuum above the bulk gap. We have also examined analytically the effects of the defects by using a pure Dirac fermion model for the surface states and found that the LDOS decays asymptotically faster at least by a factor of 1/r than that in normal metals, consistent with the results obtained from our lattice model. © 2010 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/81079
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, QHen_HK
dc.contributor.authorWang, Den_HK
dc.contributor.authorZhang, FCen_HK
dc.date.accessioned2010-09-06T08:13:30Z-
dc.date.available2010-09-06T08:13:30Z-
dc.date.issued2010en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2010, v. 81 n. 3en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81079-
dc.description.abstractMotivated by recent scanning tunneling microscopy experiments on surfaces of Bi1-x Sb x′ and Bi2 Te3, we theoretically study the electronic structure of a three-dimensional (3D) topological insulator in the presence of a local impurity or a domain wall on its surface using a 3D lattice model. While the local density of states (LDOS) oscillates significantly in space at energies above the bulk gap, the oscillation due to the in-gap surface Dirac fermions is very weak. The extracted modulation wave number as a function of energy satisfies the Dirac dispersion for in-gap energies and follows the border of the bulk continuum above the bulk gap. We have also examined analytically the effects of the defects by using a pure Dirac fermion model for the surface states and found that the LDOS decays asymptotically faster at least by a factor of 1/r than that in normal metals, consistent with the results obtained from our lattice model. © 2010 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B: Condensed Matter and Materials Physics. Copyright © American Physical Society.en_HK
dc.subjectPhysics-
dc.titleElectronic structure near an impurity and terrace on the surface of a three-dimensional topological insulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=81&issue=3 article no. 035104&spage=&epage=&date=2010&atitle=Electronic+structure+near+an+impurity+and+terrace+on+the+surface+of+a+three-dimensional+topological+insulatoren_HK
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_HK
dc.identifier.authorityZhang, FC=rp00840en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.81.035104en_HK
dc.identifier.scopuseid_2-s2.0-77954774769en_HK
dc.identifier.hkuros169473en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77954774769&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue3en_HK
dc.identifier.isiWOS:000274002300029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, QH=7406916485en_HK
dc.identifier.scopusauthoridWang, D=7407070510en_HK
dc.identifier.scopusauthoridZhang, FC=14012468800en_HK

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