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Article: Synthesis and characterization of nanocrystalline tungsten oxide nanosheets in large scale

TitleSynthesis and characterization of nanocrystalline tungsten oxide nanosheets in large scale
Authors
Hu, RWu, HHong, K
KeywordsHydrates
Nanocrystalline materials
Nanostructure
Potassium hydrates
Tungsten
Issue Date2009
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/jmr
Citation
Journal Of Materials Research, 2009, v. 24 n. 1, p. 187-191 How to Cite?
DOI: http://dx.doi.org/10.1557/jmr.2009.0026
AbstractA high quantity of tungsten oxide nanosheets were synthesized by oxidizing tungsten plates with potassium hydrate as the catalyst and tungsten plate as the substrate. The structural and geometrical properties were characterized by various techniques. It was found that the crystalline nanosheets have a WO3 structure with thicknesses of 30-50 nm and widths up to tens of micrometers. There exist two characteristic acute angles of about 37° or 51° on the nanosheet plane. The formation of these angles and the growth mechanism were discussed. © 2009 Materials Research Society.
Persistent Identifierhttp://hdl.handle.net/10722/81072
ISSN
0884-2914
2021 Impact Factor: 2.909
2020 SCImago Journal Rankings: 0.788
ISI Accession Number ID
WOS:000267207500023
Funding AgencyGrant Number
Hong Kong Special Administrative Region, ChinaHKU 7047/05P
Funding Information:

This work is financially supported by the Research Grant Council of the Hong Kong Special Administrative Region, China under Grant No. HKU 7047/05P.

References
References in Scopus
Grants
Anomalous temperature dependence of the growth mode and strain in InN/GaN during molecular-beam epitaxy

 

DC FieldValueLanguage
dc.contributor.authorHu, Ren_HK
dc.contributor.authorWu, Hen_HK
dc.contributor.authorHong, Ken_HK
dc.date.accessioned2010-09-06T08:13:26Z-
dc.date.available2010-09-06T08:13:26Z-
dc.date.issued2009en_HK
dc.identifier.citationJournal Of Materials Research, 2009, v. 24 n. 1, p. 187-191en_HK
dc.identifier.issn0884-2914en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81072-
dc.description.abstractA high quantity of tungsten oxide nanosheets were synthesized by oxidizing tungsten plates with potassium hydrate as the catalyst and tungsten plate as the substrate. The structural and geometrical properties were characterized by various techniques. It was found that the crystalline nanosheets have a WO3 structure with thicknesses of 30-50 nm and widths up to tens of micrometers. There exist two characteristic acute angles of about 37° or 51° on the nanosheet plane. The formation of these angles and the growth mechanism were discussed. © 2009 Materials Research Society.en_HK
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/jmren_HK
dc.relation.ispartofJournal of Materials Researchen_HK
dc.rightsJournal of Materials Research. Copyright © Materials Research Society.en_HK
dc.subjectHydrates-
dc.subjectNanocrystalline materials-
dc.subjectNanostructure-
dc.subjectPotassium hydrates-
dc.subjectTungsten-
dc.titleSynthesis and characterization of nanocrystalline tungsten oxide nanosheets in large scaleen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0884-2914&volume=24&issue=1&spage=187&epage=191&date=2009&atitle=Synthesis+and+characterization+of+nanocrystalline+tungsten+oxide+nanosheets+in+large+scaleen_HK
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_HK
dc.identifier.authorityWu, H=rp00813en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1557/jmr.2009.0026en_HK
dc.identifier.scopuseid_2-s2.0-61749083473en_HK
dc.identifier.hkuros169485en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-61749083473&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume24en_HK
dc.identifier.issue1en_HK
dc.identifier.spage187en_HK
dc.identifier.epage191en_HK
dc.identifier.eissn2044-5326-
dc.identifier.isiWOS:000267207500023-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectAnomalous temperature dependence of the growth mode and strain in InN/GaN during molecular-beam epitaxy-
dc.identifier.scopusauthoridHu, R=35242509400en_HK
dc.identifier.scopusauthoridWu, H=7405584367en_HK
dc.identifier.scopusauthoridHong, K=8657303000en_HK
dc.identifier.issnl0884-1616-

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