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Article: Design and implementation of a S-parameter wafer defect scanner

TitleDesign and implementation of a S-parameter wafer defect scanner
Authors
KeywordsDefect-Map
Imaging
Interactive
Resolution
S-Parameter
Issue Date2004
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 2004, v. 445-446, p. 501-503 How to Cite?
AbstractWe describe the design and implementation of a real-time automated scanning system that gives an S-parameter image of a semiconductor wafer, thus allowing the density of vacancy type defects to be shown as a function of position on the wafer. A conventional 22Na positron source of 0.5 mm diameter rasters across 5×5cm 2 region of two times per hour in rectilinear motion. Gamma ray energies E y are processed using a standard HP Ge spectroscopy system and a 14 bit nuclear ADC. Over a period of 1-2 days a high resolution 128×128 pixel image with 256 colours (scaled to the S-parameter range) can be formed as a wafer defect map. The system is reliable, interactive and user-friendly (patent pending 2003).
Persistent Identifierhttp://hdl.handle.net/10722/81069
ISSN
2005 Impact Factor: 0.399
References

 

DC FieldValueLanguage
dc.contributor.authorNaik, PSen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:13:24Z-
dc.date.available2010-09-06T08:13:24Z-
dc.date.issued2004en_HK
dc.identifier.citationMaterials Science Forum, 2004, v. 445-446, p. 501-503en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81069-
dc.description.abstractWe describe the design and implementation of a real-time automated scanning system that gives an S-parameter image of a semiconductor wafer, thus allowing the density of vacancy type defects to be shown as a function of position on the wafer. A conventional 22Na positron source of 0.5 mm diameter rasters across 5×5cm 2 region of two times per hour in rectilinear motion. Gamma ray energies E y are processed using a standard HP Ge spectroscopy system and a 14 bit nuclear ADC. Over a period of 1-2 days a high resolution 128×128 pixel image with 256 colours (scaled to the S-parameter range) can be formed as a wafer defect map. The system is reliable, interactive and user-friendly (patent pending 2003).en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.en_HK
dc.subjectDefect-Mapen_HK
dc.subjectImagingen_HK
dc.subjectInteractiveen_HK
dc.subjectResolutionen_HK
dc.subjectS-Parameteren_HK
dc.titleDesign and implementation of a S-parameter wafer defect scanneren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=445-446&spage=501&epage=503&date=2004&atitle=Design+and+implementation+of+a+S-parameter+wafer+defect+scanneren_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-3142659010en_HK
dc.identifier.hkuros85722en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-3142659010&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume445-446en_HK
dc.identifier.spage501en_HK
dc.identifier.epage503en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridNaik, PS=8451851900en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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