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Article: Optical characterization of structure for semiconductor quantum dots

TitleOptical characterization of structure for semiconductor quantum dots
Authors
Issue Date2008
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 2008, v. 77 n. 11 How to Cite?
AbstractLinear polarization of the multiexciton emission from self-assembled quantum dots is investigated by using an empirical tight-binding method. The polarization of the primary interband transition is shown to have a quadratic dependence on the lateral aspect ratio of the structures and is insensitive to both the excitonic and random intermixing effects, which make it an appropriate tool for structure characterization. The ground-state transitions in the emission spectra of multiexciton complexes are found to exhibit very different polarization from the primary interband transition, which we attribute to different component profiles in the excited valence-band states. © 2008 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/81067
ISSN
2014 Impact Factor: 3.736
2015 SCImago Journal Rankings: 1.933
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorSheng, Wen_HK
dc.contributor.authorXu, SJen_HK
dc.date.accessioned2010-09-06T08:13:23Z-
dc.date.available2010-09-06T08:13:23Z-
dc.date.issued2008en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 2008, v. 77 n. 11en_HK
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81067-
dc.description.abstractLinear polarization of the multiexciton emission from self-assembled quantum dots is investigated by using an empirical tight-binding method. The polarization of the primary interband transition is shown to have a quadratic dependence on the lateral aspect ratio of the structures and is insensitive to both the excitonic and random intermixing effects, which make it an appropriate tool for structure characterization. The ground-state transitions in the emission spectra of multiexciton complexes are found to exhibit very different polarization from the primary interband transition, which we attribute to different component profiles in the excited valence-band states. © 2008 The American Physical Society.en_HK
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.titleOptical characterization of structure for semiconductor quantum dotsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1474-7065&volume=77&spage=113305: 1&epage=4&date=2008&atitle=Optical+characterization+of+structure+for+semiconductor+quantum+dotsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1103/PhysRevB.77.113305en_HK
dc.identifier.scopuseid_2-s2.0-41449091927en_HK
dc.identifier.hkuros141606en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-41449091927&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume77en_HK
dc.identifier.issue11en_HK
dc.identifier.isiWOS:000254542800019-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridSheng, W=7103378686en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK

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