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Article: Rectifying characteristics and transport behavior of SrTiO3-δ(110)/p-Si(100) heterojunctions

TitleRectifying characteristics and transport behavior of SrTiO3-δ(110)/p-Si(100) heterojunctions
Authors
KeywordsDielectric devices
Electric insulators
Electric space charge
Electron transport properties
Silicon
Issue Date2007
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2007, v. 91 n. 6, article no. 062105 How to Cite?
AbstractIntroducing oxygen vacancy causes the dielectric insulator SrTi O3 to evolve to a n -type semiconductor. The authors have fabricated n-SrTi O3-δ (110) p-Si (100) heterojunctions, showing clear rectifying characteristics at different temperatures from 100 to 292 K. A forward-to-reverse bias ratio of about 1200 was found at V=±2 V for the p-n junction operated at T=292 K. The current-voltage characteristic follows Iexp (eVkT) for the p-n junction at relatively low forward-bias voltage, while the relation of I∼ V1.9 describes the transport behavior of p-n junction at relatively high forward-bias voltage. The measured results have been discussed in Anderson model and space charge limited model. © 2007 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/81065
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLuo, Zen_HK
dc.contributor.authorHao, JHen_HK
dc.contributor.authorGao, Jen_HK
dc.date.accessioned2010-09-06T08:13:21Z-
dc.date.available2010-09-06T08:13:21Z-
dc.date.issued2007en_HK
dc.identifier.citationApplied Physics Letters, 2007, v. 91 n. 6, article no. 062105en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81065-
dc.description.abstractIntroducing oxygen vacancy causes the dielectric insulator SrTi O3 to evolve to a n -type semiconductor. The authors have fabricated n-SrTi O3-δ (110) p-Si (100) heterojunctions, showing clear rectifying characteristics at different temperatures from 100 to 292 K. A forward-to-reverse bias ratio of about 1200 was found at V=±2 V for the p-n junction operated at T=292 K. The current-voltage characteristic follows Iexp (eVkT) for the p-n junction at relatively low forward-bias voltage, while the relation of I∼ V1.9 describes the transport behavior of p-n junction at relatively high forward-bias voltage. The measured results have been discussed in Anderson model and space charge limited model. © 2007 American Institute of Physics.-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong Licenseen_HK
dc.rightsCopyright (2007) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (Applied Physics Letters, 2007, v. 91 n. 6, article no. 062105) and may be found at (http://apl.aip.org/resource/1/applab/v91/i6/p062105_s1).-
dc.subjectDielectric devices-
dc.subjectElectric insulators-
dc.subjectElectric space charge-
dc.subjectElectron transport properties-
dc.subjectSilicon-
dc.titleRectifying characteristics and transport behavior of SrTiO3-δ(110)/p-Si(100) heterojunctionsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=91&spage=062105: 1&epage=3&date=2007&atitle=Rectifying+characteristics+and+transport+behavior+of+SrTiO3-d(110)/p-Si(100)+heterojunctionsen_HK
dc.identifier.emailGao, J: jugao@hku.hken_HK
dc.identifier.authorityGao, J=rp00699en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2767999-
dc.identifier.scopuseid_2-s2.0-34547850727-
dc.identifier.hkuros141343en_HK
dc.identifier.volume91-
dc.identifier.issue6, article no. 062105-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000248661400062-
dc.publisher.placeUnited States-

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