Rectifying characteristics and transport behavior of SrTiO3-δ(110)/p-Si(100) heterojunctions

Abstract

Introducing oxygen vacancy causes the dielectric insulator SrTi O3 to evolve to a n -type semiconductor. The authors have fabricated n-SrTi O3-δ (110) p-Si (100) heterojunctions, showing clear rectifying characteristics at different temperatures from 100 to 292 K. A forward-to-reverse bias ratio of about 1200 was found at V=±2 V for the p-n junction operated at T=292 K. The current-voltage characteristic follows Iexp (eVkT) for the p-n junction at relatively low forward-bias voltage, while the relation of I∼ V1.9 describes the transport behavior of p-n junction at relatively high forward-bias voltage. The measured results have been discussed in Anderson model and space charge limited model. © 2007 American Institute of Physics.