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Conference Paper: Positron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient method

TitlePositron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient method
Authors
KeywordsDoppler shift
EL2
Gallium arsenide
Positron deep level transient spectroscopy
Positron mobility
Issue Date2001
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 2001, v. 363-365, p. 117-119 How to Cite?
AbstractRecently a new semiconductor defect spectroscopy, namely positron deep level transient spectroscopy (PDLTS) has been proposed that combines the energy selectivity of deep level transient spectroscopy with the structural sensitivity of positron annihilation spectroscopy. This paper focuses on one variant of PDLTS, namely positron velocity PDLTS, which has no sensitivity towards vacancy defects but nevertheless is useful in studying deep levels in semi-insulators. In the present study the electric field within the depletion region of semi-insulting GaAs is monitored through the measurement of the small Doppler shift in the annihilation radiation that comes from this region as a result of positron drift. The drift is the result of an increasing electric field produced by space charge building up from ionizing deep level defects. Doppler shift transients are measured between 50-300K. The EL2 level emission transients are clearly seen at temperatures around 300K that yield E C-0.78±0.08eV for the energy of EL2. The EL2 electron capture rate is found to have an activation energy of 0.61±0.08eV which most probably arises from freeze out of conduction electrons. We find the surprising result that emission and capture transients can be seen at temperatures below 200K. Possible reasons for these transients are discussed.
Persistent Identifierhttp://hdl.handle.net/10722/81053
ISSN
2005 Impact Factor: 0.399
References

 

DC FieldValueLanguage
dc.contributor.authorTsia, Men_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2010-09-06T08:13:13Z-
dc.date.available2010-09-06T08:13:13Z-
dc.date.issued2001en_HK
dc.identifier.citationMaterials Science Forum, 2001, v. 363-365, p. 117-119en_HK
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81053-
dc.description.abstractRecently a new semiconductor defect spectroscopy, namely positron deep level transient spectroscopy (PDLTS) has been proposed that combines the energy selectivity of deep level transient spectroscopy with the structural sensitivity of positron annihilation spectroscopy. This paper focuses on one variant of PDLTS, namely positron velocity PDLTS, which has no sensitivity towards vacancy defects but nevertheless is useful in studying deep levels in semi-insulators. In the present study the electric field within the depletion region of semi-insulting GaAs is monitored through the measurement of the small Doppler shift in the annihilation radiation that comes from this region as a result of positron drift. The drift is the result of an increasing electric field produced by space charge building up from ionizing deep level defects. Doppler shift transients are measured between 50-300K. The EL2 level emission transients are clearly seen at temperatures around 300K that yield E C-0.78±0.08eV for the energy of EL2. The EL2 electron capture rate is found to have an activation energy of 0.61±0.08eV which most probably arises from freeze out of conduction electrons. We find the surprising result that emission and capture transients can be seen at temperatures below 200K. Possible reasons for these transients are discussed.en_HK
dc.languageengen_HK
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.en_HK
dc.subjectDoppler shiften_HK
dc.subjectEL2en_HK
dc.subjectGallium arsenideen_HK
dc.subjectPositron deep level transient spectroscopyen_HK
dc.subjectPositron mobilityen_HK
dc.titlePositron deep-level transient spectroscopy in semi-insulating-GaAs using the positron velocity transient methoden_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0255-5476&volume=363-365&spage=117&epage=119&date=2001&atitle=Positron+Deep-Level+Transient+Spectroscopy+in+Semi-Insulating-GaAs+Using+the+Positron+Velocity+Transient+Methoden_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0034999208en_HK
dc.identifier.hkuros56852en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0034999208&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume363-365en_HK
dc.identifier.spage117en_HK
dc.identifier.epage119en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridTsia, M=35335225900en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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