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Article: Core-level shift of Si nanocrystals embedded in a SiO 2 matrix

TitleCore-level shift of Si nanocrystals embedded in a SiO 2 matrix
Authors
Issue Date2004
PublisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/jpcbfk
Citation
Journal Of Physical Chemistry B, 2004, v. 108 n. 43, p. 16609-16612 How to Cite?
AbstractIt is expected from existing theories that the core level of Si nanocrystals (nc-Si) embedded in a SiO 2 matrix should shift toward a higher binding energy as compared to that of bulk crystalline Si due to quantum size effect. Indeed, it is observed in X-ray photoemission experiments that the Si 2p core level shifts to a higher apparent binding energy by 1-2 eV for all five oxidation states of Si n+ (n = 0, 1, 2, 3, and 4) in the material system of SiO 2 containing nc-Si. However, it is found that the core-level shift is due to a charging effect in the material system. After correction for the charging effect by using C 1s binding energy due to contamination on the SiO2 surface, the core level of the oxidation state Si 4+ is the same as that of pure SiO 2, whereas the core level of the isolated nc-Si with an average size of about 3 nm shifts by ∼ 0.6 eV to a lower binding energy as compared to that of bulk crystalline Si. It is suspected that the core-level shift of the nc-Si toward a lower binding energy is due to the influence of the differential charging between the SiO 2 surface layer and the nc-Si underneath.
Persistent Identifierhttp://hdl.handle.net/10722/81035
ISSN
2015 Impact Factor: 3.187
2015 SCImago Journal Rankings: 1.414
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorSun, CQen_HK
dc.contributor.authorTse, MSen_HK
dc.contributor.authorHsieh, JHen_HK
dc.contributor.authorFu, YQen_HK
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2010-09-06T08:13:01Z-
dc.date.available2010-09-06T08:13:01Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal Of Physical Chemistry B, 2004, v. 108 n. 43, p. 16609-16612en_HK
dc.identifier.issn1520-6106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81035-
dc.description.abstractIt is expected from existing theories that the core level of Si nanocrystals (nc-Si) embedded in a SiO 2 matrix should shift toward a higher binding energy as compared to that of bulk crystalline Si due to quantum size effect. Indeed, it is observed in X-ray photoemission experiments that the Si 2p core level shifts to a higher apparent binding energy by 1-2 eV for all five oxidation states of Si n+ (n = 0, 1, 2, 3, and 4) in the material system of SiO 2 containing nc-Si. However, it is found that the core-level shift is due to a charging effect in the material system. After correction for the charging effect by using C 1s binding energy due to contamination on the SiO2 surface, the core level of the oxidation state Si 4+ is the same as that of pure SiO 2, whereas the core level of the isolated nc-Si with an average size of about 3 nm shifts by ∼ 0.6 eV to a lower binding energy as compared to that of bulk crystalline Si. It is suspected that the core-level shift of the nc-Si toward a lower binding energy is due to the influence of the differential charging between the SiO 2 surface layer and the nc-Si underneath.en_HK
dc.languageengen_HK
dc.publisherAmerican Chemical Society. The Journal's web site is located at http://pubs.acs.org/journal/jpcbfken_HK
dc.relation.ispartofJournal of Physical Chemistry Ben_HK
dc.titleCore-level shift of Si nanocrystals embedded in a SiO 2 matrixen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1520-6106&volume=108&spage=16609&epage=16612&date=2004&atitle=Core-level+shift+of+Si+nanocrystals+embedded+in+a+SiO2+matrixen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1021/jp0465276en_HK
dc.identifier.scopuseid_2-s2.0-8344229848en_HK
dc.identifier.hkuros96341en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-8344229848&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume108en_HK
dc.identifier.issue43en_HK
dc.identifier.spage16609en_HK
dc.identifier.epage16612en_HK
dc.identifier.isiWOS:000224685600003-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridLiu, Y=36064444100en_HK
dc.identifier.scopusauthoridSun, CQ=7404248313en_HK
dc.identifier.scopusauthoridTse, MS=7103352646en_HK
dc.identifier.scopusauthoridHsieh, JH=26537549500en_HK
dc.identifier.scopusauthoridFu, YQ=7404433406en_HK
dc.identifier.scopusauthoridLiu, YC=36062391300en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK

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