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Article: Studies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopy

TitleStudies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopy
Authors
KeywordsAnnealing
Deep level transient spectroscopy
Interfaces (materials)
Photoluminescence
Secondary ion mass spectrometry
Issue Date2008
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2008, v. 92 n. 4 How to Cite?
AbstractThe evolution of near-interfacial defects from Al2 O3 ZnO and MgOZnO upon thermal annealing has been studied by photoluminescence, deep level transient spectroscopy, and secondary ion mass spectroscopy. We find that all the results are strongly connected and that they point to the direction that Zn outdiffuses from ZnO to the oxide layer during annealing and creates deep level defects near the interfacial region. These defects reduce the band-edge emission and increase the deep level emission at 2.37 eV. Our study shows that the oxide/ZnO interface is relatively fragile and caution must be taken for making metal-oxide-ZnO based transistors and light emitting diodes. © 2008 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/81022
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWang, RSen_HK
dc.contributor.authorGu, QLen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorOng, HCen_HK
dc.date.accessioned2010-09-06T08:12:52Z-
dc.date.available2010-09-06T08:12:52Z-
dc.date.issued2008en_HK
dc.identifier.citationApplied Physics Letters, 2008, v. 92 n. 4en_HK
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81022-
dc.description.abstractThe evolution of near-interfacial defects from Al2 O3 ZnO and MgOZnO upon thermal annealing has been studied by photoluminescence, deep level transient spectroscopy, and secondary ion mass spectroscopy. We find that all the results are strongly connected and that they point to the direction that Zn outdiffuses from ZnO to the oxide layer during annealing and creates deep level defects near the interfacial region. These defects reduce the band-edge emission and increase the deep level emission at 2.37 eV. Our study shows that the oxide/ZnO interface is relatively fragile and caution must be taken for making metal-oxide-ZnO based transistors and light emitting diodes. © 2008 American Institute of Physics.en_HK
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.en_HK
dc.rightsAfter publication: Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in (citation of published article) and may be found at (URL/link for published article abstract). Before publication: The following article has been submitted to/accepted by [Name of Journal]. After it is published, it will be found at (URL/link to the entry page of the journal).-
dc.subjectAnnealing-
dc.subjectDeep level transient spectroscopy-
dc.subjectInterfaces (materials)-
dc.subjectPhotoluminescence-
dc.subjectSecondary ion mass spectrometry-
dc.titleStudies of oxide/ZnO near-interfacial defects by photoluminescence and deep level transient spectroscopyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=92&spage=042105: 1&epage=3&date=2008&atitle=Studies+of+oxide/ZnO+near-interfacial+defects+by+photoluminescence+and+deep+level+transient+spectroscopyen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.2838326en_HK
dc.identifier.scopuseid_2-s2.0-38849139218en_HK
dc.identifier.hkuros140314en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-38849139218&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume92en_HK
dc.identifier.issue4en_HK
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000252860400046-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWang, RS=13304612700en_HK
dc.identifier.scopusauthoridGu, QL=16067090400en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridOng, HC=7102298056en_HK

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