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Article: Anisotropic ambipolar diffusion of carriers in InGaN/GaN quantum wells

TitleAnisotropic ambipolar diffusion of carriers in InGaN/GaN quantum wells
Authors
Issue Date2006
PublisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628
Citation
Physica Status Solidi (C) Current Topics In Solid State Physics, 2006, v. 3, p. 1988-1991 How to Cite?
AbstractBy directly imaging the photo luminescence of the samples, we observe strong anisotropic lateral diffusion of photogenerated carriers in InGaN/GaN quantum-wells structures. For quantitative interpretation of the phenomenon, the ambipolar diffusion of carriers in such structures is calculated using the two-dimensional drift-diffusion equation when the huge piezoelectric field in the strained InGaN/GaN quantum wells is taken into account. Very good agreement between theory and experiment is achieved. Our results show that the strong piezoelectric field and crystalline direction dependence of the carrier mobility are responsible for the enhancement and anisotropy of carriers' lateral diffusion, respectively. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.
Persistent Identifierhttp://hdl.handle.net/10722/81021
ISSN
2015 SCImago Journal Rankings: 0.392
References

 

DC FieldValueLanguage
dc.contributor.authorWang, YJen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorLi, Qen_HK
dc.date.accessioned2010-09-06T08:12:52Z-
dc.date.available2010-09-06T08:12:52Z-
dc.date.issued2006en_HK
dc.identifier.citationPhysica Status Solidi (C) Current Topics In Solid State Physics, 2006, v. 3, p. 1988-1991en_HK
dc.identifier.issn1862-6351en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81021-
dc.description.abstractBy directly imaging the photo luminescence of the samples, we observe strong anisotropic lateral diffusion of photogenerated carriers in InGaN/GaN quantum-wells structures. For quantitative interpretation of the phenomenon, the ambipolar diffusion of carriers in such structures is calculated using the two-dimensional drift-diffusion equation when the huge piezoelectric field in the strained InGaN/GaN quantum wells is taken into account. Very good agreement between theory and experiment is achieved. Our results show that the strong piezoelectric field and crystalline direction dependence of the carrier mobility are responsible for the enhancement and anisotropy of carriers' lateral diffusion, respectively. © 2006 WILEY-VCH Verlag GmbH & Co. KGaA.en_HK
dc.languageengen_HK
dc.publisherWiley - V C H Verlag GmbH & Co KGaA. The Journal's web site is located at http://www3.interscience.wiley.com/cgi-bin/jhome/102519628en_HK
dc.relation.ispartofPhysica Status Solidi (C) Current Topics in Solid State Physicsen_HK
dc.titleAnisotropic ambipolar diffusion of carriers in InGaN/GaN quantum wellsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1610-1634&volume=3&spage=1988&epage=1991&date=2006&atitle=Anisotropic+ambipolar+diffusion+of+carriers+in+InGaN/GaN+quantum+wellsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/pssc.200565244en_HK
dc.identifier.scopuseid_2-s2.0-33746341802en_HK
dc.identifier.hkuros116259en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33746341802&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume3en_HK
dc.identifier.spage1988en_HK
dc.identifier.epage1991en_HK
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridWang, YJ=8296286800en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridLi, Q=7405861869en_HK

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